Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer

Hiroki Muraoka; Tomosumi Kamimura; Yuki Yamana; Yoshiaki Matsura; Hideo Horibe

doi:10.1117/12.977338

4 December 2012 Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer

Hiroki Muraoka, Tomosumi Kamimura, Yuki Yamana, Yoshiaki Matsura, Hideo Horibe

Author Affiliations +

Proceedings Volume 8530, Laser-Induced Damage in Optical Materials: 2012; 85301V (2012) https://doi.org/10.1117/12.977338
Event: SPIE Laser Damage, 2012, Boulder, Colorado, United States

Abstract

Positive-tone diazonaphthoquinone / novolak (DNQ / novolak) resist was stripped from Si wafer by using a pulsed laser beam from visible to near infrared. Silicon wafer with resist was sunk in water to utilize irradiated laser energy effectively. When the resist was irradiated with the fundamental wavelength of the Nd:YAG laser, the resist was stripped from the Si wafer. No damage could be detected from the processed silicon wafer surface. The resist stripping effect in water condition was improved due to both the thermal expansion of the Si wafer and pressure from water. And also, laser irradiation of wavelength 532 nm, having large photon energy, was found to have a higher resist stripping effect than that of wavelength 1064 nm.

Citation Download Citation

Hiroki Muraoka, Tomosumi Kamimura, Yuki Yamana, Yoshiaki Matsura, and Hideo Horibe "Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer", Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301V (4 December 2012); https://doi.org/10.1117/12.977338

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KEYWORDS

Silicon

Semiconducting wafers

Laser irradiation

Laser damage threshold

Laser induced damage

Near infrared

Visible radiation

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