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Proceedings Article

Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer

[+] Author Affiliations
Hiroki Muraoka, Tomosumi Kamimura, Yuki Yamana, Yoshiaki Matsura

Osaka Institute of Technology (Japan)

Hideo Horibe

Kanazawa Institute of Technology (Japan)

Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301V (December 6, 2012); doi:10.1117/12.977338
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From Conference Volume 8530

  • Laser-Induced Damage in Optical Materials: 2012
  • Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; M J Soileau
  • Boulder, Colorado, USA | September 23, 2012

abstract

Positive-tone diazonaphthoquinone / novolak (DNQ / novolak) resist was stripped from Si wafer by using a pulsed laser beam from visible to near infrared. Silicon wafer with resist was sunk in water to utilize irradiated laser energy effectively. When the resist was irradiated with the fundamental wavelength of the Nd:YAG laser, the resist was stripped from the Si wafer. No damage could be detected from the processed silicon wafer surface. The resist stripping effect in water condition was improved due to both the thermal expansion of the Si wafer and pressure from water. And also, laser irradiation of wavelength 532 nm, having large photon energy, was found to have a higher resist stripping effect than that of wavelength 1064 nm.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Hiroki Muraoka ; Tomosumi Kamimura ; Yuki Yamana ; Yoshiaki Matsura and Hideo Horibe
"Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer", Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301V (December 6, 2012); doi:10.1117/12.977338; http://dx.doi.org/10.1117/12.977338


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