Positive-tone diazonaphthoquinone / novolak (DNQ / novolak) resist was stripped from Si wafer by using a pulsed
laser beam from visible to near infrared. Silicon wafer with resist was sunk in water to utilize irradiated laser energy
effectively. When the resist was irradiated with the fundamental wavelength of the Nd:YAG laser, the resist was stripped
from the Si wafer. No damage could be detected from the processed silicon wafer surface. The resist stripping effect in
water condition was improved due to both the thermal expansion of the Si wafer and pressure from water. And also, laser
irradiation of wavelength 532 nm, having large photon energy, was found to have a higher resist stripping effect than that
of wavelength 1064 nm.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation
Hiroki Muraoka ; Tomosumi Kamimura ; Yuki Yamana ; Yoshiaki Matsura and Hideo Horibe
"Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer", Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301V (December 6, 2012); doi:10.1117/12.977338; http://dx.doi.org/10.1117/12.977338
