Room temperature GaN-based spin polarized emitters

A. G. Melton; B. Kucukgok; Zhiqiang Liu; N. Dietz; N. Lu; I. T. Ferguson

doi:10.1117/12.2012586

4 February 2013 Room temperature GaN-based spin polarized emitters

A. G. Melton, B. Kucukgok, Zhiqiang Liu, N. Dietz, N. Lu, I. T. Ferguson

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Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863104 (2013) https://doi.org/10.1117/12.2012586
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Wide band gap dilute magnetic semiconductors have recently been of interest due to theoretical predictions of room temperature ferromagnetism in these materials. In this work Ga_1-xGdxN thin films were grown by Metalorganic Chemical Vapor Deposition. These films were found to be ferromagnetic at room temperature and electrically conducting. However, only GaN:Gd layers and devices grown with a TMHD₃Gd precursor that contained oxygen showed strong ferromagnetism, while materials grown with an oxygen-free Cp₃Gd precursor did not show ferromagnetic behavior. This experimental observation was consistent with first-principles calculations based on density functional theory calculations that we completed that showed the ferromagnetism was mediated by interstitial oxygen. The results confirmed the first successful realization of Ga_1-xGd_xN-based spin-polarized LED with 14.6% degree of polarization at 5000 Gauss is obtained.

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A. G. Melton, B. Kucukgok, Zhiqiang Liu, N. Dietz, N. Lu, and I. T. Ferguson "Room temperature GaN-based spin polarized emitters", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863104 (4 February 2013); https://doi.org/10.1117/12.2012586

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KEYWORDS

Gadolinium

Magnetism

Gallium nitride

Light emitting diodes

Oxygen

Magnetic semiconductors

Ferromagnetics

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