High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures

Yi Zhou; Jianxin Chen; Fangfang Wang; Zhicheng Xu; Zhizhong Bai; Chuan Jin; Li He

doi:10.1117/12.2180425

13 April 2015 High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures

Yi Zhou, Jianxin Chen, Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Chuan Jin, Li He

Author Affiliations +

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 952223 (2015) https://doi.org/10.1117/12.2180425
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

The barrier enhanced InAs/GaSb long wavelength photodetectors were designed and demonstrated in this paper. A PBIN detector with an electron barrier inserted between P type contactor and absorption region show significantly improved electrical performances compared to a PIN structure. The R_maxA product of the PBIN detector was measured to be 104 Ωcm² at 80K and 7360 Ωcm² at 50K. Temperature dependent measurements show that the tunneling currents dominate the dark current below 50K, the generation-recombination (GR) currents dominate from 50K to 90K, and the diffusion current dominate over 90K. The PBIN structure benefits from a lower electric field in the absorption region and therefore, suppressed the tunnel currents and GR currents. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface, which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, hole barrier was designed without Al element to form a PBπBN structure. The R_maxA product of the PBπBN detector was measured to be 77 Ωcm² and the dark current density under -0.05V bias was measured to be 8.8×10^-4A/cm² at 80K. The peak current responsivity at 9.8 μm was 2.15A/W and the quantum efficiency was 26.7%.

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Yi Zhou, Jianxin Chen, Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Chuan Jin, and Li He "High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952223 (13 April 2015); https://doi.org/10.1117/12.2180425

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KEYWORDS

Sensors

Gallium antimonide

Absorption

Quantum efficiency

Stereolithography

Superlattices

Photodetectors

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