Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system

Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Kenichi Suematsu; Kenji Terao

doi:10.1117/12.2241376

10 May 2016 Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, Kenji Terao

Author Affiliations +

Proceedings Volume 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 99840M (2016) https://doi.org/10.1117/12.2241376
Event: Photomask Japan 2016, 2016, Yokohama, Japan

Abstract

Extreme ultraviolet lithography (EUVL) is a promising technique for 1X nm half-pitch (hp) generation lithography. The inspection of patterned EUVL masks is one of the main issues that must be addressed during mask fabrication for manufacture of devices with 11 nm hp feature sizes. We have already designed projection electron microscope (PEM) optics that have been integrated into a new inspection system called Model EBEYE-V30 (where “Model EBEYE” is an EBARA’s model code) and this system seems quite promising for 16 nm hp generation EUVL patterned mask inspection. The defect inspection sensitivity of this system was evaluated via capture of an electron image that was generated at the mask by focusing the image through the projection optics onto a time-delay integration (TDI) image sensor. For increased throughput and higher defect detection sensitivity, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and a simultaneous deflector for the image capture area that follows the mask scanning motion have been developed. Using a combination of synchronous deflection and mask scanning, the image can be integrated into both the fixed area image sensor and the TDI image sensor. We describe our experimental results for EUV patterned mask inspection using the above system. Elements have been developed for inspection tool integration and the designed specification has been verified. The system performance demonstrates the defect detectability required for 11 nm hp generation EUVL masks.

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Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, and Kenji Terao "Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840M (10 May 2016); https://doi.org/10.1117/12.2241376

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KEYWORDS

Image sensors

Inspection

Photomasks

Extreme ultraviolet lithography

Defect detection

Image processing

Electron microscopes

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