Modeling high-frequency capacitance in SOI MOS capacitors

Lidia Łukasiak; Jakub Jasiński; Romuald B. Beck; Fawzi A. Ikraiam

doi:10.1117/12.2260788

22 December 2016 Modeling high-frequency capacitance in SOI MOS capacitors

Lidia Łukasiak, Jakub Jasiński, Romuald B. Beck, Fawzi A. Ikraiam

Proceedings Volume 10175, Electron Technology Conference 2016; 101750C (2016) https://doi.org/10.1117/12.2260788
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.

Citation Download Citation

Lidia Łukasiak, Jakub Jasiński, Romuald B. Beck, and Fawzi A. Ikraiam "Modeling high-frequency capacitance in SOI MOS capacitors", Proc. SPIE 10175, Electron Technology Conference 2016, 101750C (22 December 2016); https://doi.org/10.1117/12.2260788

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