Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

Maxim S. Gorbunov; Gennady I. Zebrev

doi:10.1117/12.2266864

30 December 2016 Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022416 (2016) https://doi.org/10.1117/12.2266864
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

We propose a Verilog-A modeling concept for modern bulk and SOI FinFETs TID sensitivity modeling. The concept allows to model the fin width and length dependencies of TID sensitivity.

Citation Download Citation

Maxim S. Gorbunov and Gennady I. Zebrev "Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022416 (30 December 2016); https://doi.org/10.1117/12.2266864

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