Paper
27 March 2017 Study on thick film spin-on carbon hardmask
Taeho Kim, Youngmin Kim, Sunmin Hwang, Hyunsoo Lee, Miyeon Han, Sanghak Lim
Author Affiliations +
Abstract
A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400°C after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taeho Kim, Youngmin Kim, Sunmin Hwang, Hyunsoo Lee, Miyeon Han, and Sanghak Lim "Study on thick film spin-on carbon hardmask", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014623 (27 March 2017); https://doi.org/10.1117/12.2257867
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Cited by 1 scholarly publication.
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KEYWORDS
Coating

Etching

Carbon

Resistance

Transparency

Optical lithography

Semiconducting wafers

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