Optimization of e-beam landing energy for EBDW

Enden D. Liu; Ted Prescop

doi:10.1117/12.879443

4 April 2011 Optimization of e-beam landing energy for EBDW

Enden D. Liu, Ted Prescop

Proceedings Volume 7970, Alternative Lithographic Technologies III; 79701S (2011) https://doi.org/10.1117/12.879443
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

As critical dimensions in Logic chips continue to shrink, EBDW (E-Beam Direct Write) will play a growing role. EBDW is capable of patterning 2D shapes at extremely high resolution. EBDW will pattern low-density critical wafer-layers, complementing optical lithography in high volume manufacturing. E-beam landing energies ranging from 5 keV to 100 keV are used in EBDW today. The choice of e-beam energy effects resolution, throughput and overlay errors due to thermal effects. We present an analysis of the tradeoffs of various e-beam landing energies. We examine 5 keV, 7.5 keV, 10 keV, 20 keV and 50 keV. We use a simple column design and SIMION 8 simulation software. SIMION 8 (from Scientific Instrument Services, Inc.) is used for electrostatic lens analysis and charged particle trajectory modeling We examine: 1. Resolution (beam dose profile in resist) 2. Overlay errors due to thermal effects (beam power) Low energy EBDW has advantages in resist sensitivity and thermal control. Its disadvantages include lower beam current and a requirement for very thin resist. High energy EBDW has advantages in beam current and resolution. Its disadvantages include wafer heating and low resist sensitivity. With set requirements for resolution and thermal expansion, we report findings of beam profile and beam dose at various beam energies.

Citation Download Citation

Enden D. Liu and Ted Prescop "Optimization of e-beam landing energy for EBDW", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79701S (4 April 2011); https://doi.org/10.1117/12.879443

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