Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures

Chia-Yeh Li; Chengao Wang; Michael P. Hasselbeck; Mansoor Sheik-Bahae; Kevin J. Malloy

doi:10.1117/12.845054

18 February 2010 Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures

Chia-Yeh Li, Chengao Wang, Michael P. Hasselbeck, Mansoor Sheik-Bahae, Kevin J. Malloy

Proceedings Volume 7614, Laser Refrigeration of Solids III; 76140E (2010) https://doi.org/10.1117/12.845054
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We characterize high quantum efficiency double GaAs/InGaP heterostructures used in semiconductor laser cooling. To identify potential samples for laser cooling, measuring the nonradiative recombination rate coefficient is necessary. We describe a technique called power dependent photoluminescence measurement, which when combined with timeresolved photoluminescence lifetime determines the nonradiative recombination coefficient.

Citation Download Citation

Chia-Yeh Li, Chengao Wang, Michael P. Hasselbeck, Mansoor Sheik-Bahae, and Kevin J. Malloy "Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures", Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140E (18 February 2010); https://doi.org/10.1117/12.845054

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