Low-temperature sputter deposition of indium tin oxide anode for inverted organic diodes

David Vaufrey; Mohamed Ben Khalifa; Jacques Tardy

doi:10.1117/12.498455

8 July 2003 Low-temperature sputter deposition of indium tin oxide anode for inverted organic diodes

David Vaufrey, Mohamed Ben Khalifa, Jacques Tardy

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498455
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

This paper reports on Organic Light Emitting Diodes (OLED) the structure of which has been inverted in order to have a light emission through the top electrode instead of through the substrate. This technology is of prime importance for high resolution active matrix displays and microdisplays as well. The key point of such a procedure is the deposition of the Indium Tin Oxide (ITO) transparent top anode. This was carried out onto the organic films structure by RF sputtering under soft enough conditions so as to avoid as much as possible any deterioration of the underlying organic layers (room temperature deposition, low plasma power density and minimal bombardment effect). The electrical and optical properties of ITO as a function of the deposition conditions are first described. Hall effect measurements show that ITO films can be grown at room temperature with a high mobility (40 cm²/V.s) and a carrier density exceeding 5 10²⁰ cm^-3. The surface roughness as a function of the plasma conditions was determined by the AFM and can be as low as 12 Angstrom. The non invasiveness of the proposed ITO deposition conditions on organic layers was assessed by measuring the photoluminescence (PL) degradation of (8-(hydroquinoline) Aluminum (Alq₃). It was shown that under optimized deposition conditions, no appreciable PL degradation of the organic layers was observed. At last hole only Silicon/Al/Poly(N-vinylcarbazole)(PVK)/Poly(3,4)ethylenedioxythiophene / Polystyrenesulphonate (PEDT/PSS). ITO diodes and Silicon/Al/Alq₃/NPB/CuPc/ITO diodes were processed, characterized and compared to standard “through the substrate” emitting diodes.

Citation Download Citation

David Vaufrey, Mohamed Ben Khalifa, and Jacques Tardy "Low-temperature sputter deposition of indium tin oxide anode for inverted organic diodes", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498455

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Diodes

Oxygen

Organic light emitting diodes

Sputter deposition

Tin

Plasma

Silicon

Show All Keywords

Keywords/Phrases

Search In:

Publication Years