Crystallization of Ge-doped AgInTeSb phase-change optical disk media

Bo Liu; Hao Ruan; Fuxi Gan; Jing Chen

doi:10.1117/12.510311

9 April 2003 Crystallization of Ge-doped AgInTeSb phase-change optical disk media

Bo Liu, Hao Ruan, Fuxi Gan, Jing Chen

Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510311
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China

Abstract

Due to germanium doping in the AgInTeSb film, Ag₂Te phase was formed at minor doping and disappeared when the germanium content was high, AgInTe₂ phase changed into AgIn₂ phase, and Ge₂Sb₂Te₅ new crystalline phase appeared. The crystallization temperature of AgInTeSbGe increased manifestly with Ge addition. A doping amount of 4.1 at.% germanium increases the reflectivity contrast to be greater than 30% almost in the whole visible region.

Citation Download Citation

Bo Liu, Hao Ruan, Fuxi Gan, and Jing Chen "Crystallization of Ge-doped AgInTeSb phase-change optical disk media", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); https://doi.org/10.1117/12.510311

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