Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

[+] Author Affiliations
T. Seko, S. Mabuchi, R. Kawai, M. Iwaya, H. Amano, I. Akasaki

Meijo Univ. (Japan)

F. Teramae, A. Suzuki, Y. Kaneko

EL-SEED Corp. (Japan)

S. Kamiyama

Meijo Univ. (Japan) and EL-SEED Corp. (Japan)

Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721628 (February 16, 2009); doi:10.1117/12.811348
Text Size: A A A
From Conference Volume 7216

  • Gallium Nitride Materials and Devices IV
  • Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon
  • San Jose, CA | January 24, 2009

abstract

To realize high-efficiency light-emitting diodes (LEDs), it is indispensable to increase light extraction efficiency. We propose the moth-eye structure on the surface of an LED chip, which consists of periodic cones with a pitch of optical wavelength scale, and enables the significantly enhancement of light extraction efficiency. We have developed a new technique for moth-eye structure fabrication, on the basis of low-energy electron-beam projection lithography (LEEPL), which can be applied to the mass production of LEDs. The moth-eye structure formed at the bottom of a SiC wafer has periodically arranged cones with a 300 nm pitch and a 750 nm height. We also present blue LEDs fabricated on SiC substrates with and without the moth-eye structure, and discuss the effect of the moth-eye structure on the performance of LEDs.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

T. Seko ; S. Mabuchi ; F. Teramae ; A. Suzuki ; Y. Kaneko, et al.
"Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721628 (February 16, 2009); doi:10.1117/12.811348; http://dx.doi.org/10.1117/12.811348


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.