Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

Fen Lin; Ning Xiang; Peng Chen; Soo Jin Chua; Afshan Irshad; Stefan Roither; Audrius Pugzlys; Andrius Baltuska

doi:10.1117/12.756401

7 January 2008 Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

Fen Lin, Ning Xiang, Peng Chen, Soo Jin Chua, Afshan Irshad, Stefan Roither, Audrius Pugzlys, Andrius Baltuska

Author Affiliations +

Proceedings Volume 6824, Semiconductor Lasers and Applications III; 68240T (2008) https://doi.org/10.1117/12.756401
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.

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Fen Lin, Ning Xiang, Peng Chen, Soo Jin Chua, Afshan Irshad, Stefan Roither, Audrius Pugzlys, and Andrius Baltuska "Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240T (7 January 2008); https://doi.org/10.1117/12.756401

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