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Proceedings Article

Laser-based processes of ion implantation for Pt+/SiC gas sensor formation

[+] Author Affiliations
V. Yu. Fominski, R. I. Romanov, M. V. Demin

National Research Nuclear Univ. MEPhI (Russian Federation)

A. G. Gnedovets

A. A. Baikov Institute of Metallurgy and Materials Science (Russian Federation)

Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799411 (February 08, 2011); doi:10.1117/12.881043
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From Conference Volume 7994

  • LAT 2010: International Conference on Lasers, Applications, and Technologies
  • Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov
  • Kazan, Russian Federation | August 23, 2010

abstract

A relatively simple technique of high-energy ion implantation of the pulsed laser plasma under the influence of an external pulsed electric field is suggested. The developed mathematical model allows forecasting depth distribution of implanted atoms on the basis of experimental measurements of fundamental physical characteristics of the pulsed laser plasma and the technical parameters of high-voltage system. The possibility of implantation of platinum ions from laser plasma to create on-chip n -SiC hydrogen sensor for use in complicated conditions is demonstrated.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

V. Yu. Fominski ; A. G. Gnedovets ; R. I. Romanov and M. V. Demin
"Laser-based processes of ion implantation for Pt+/SiC gas sensor formation", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799411 (February 08, 2011); doi:10.1117/12.881043; http://dx.doi.org/10.1117/12.881043


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