Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

Konstantin I. Kolokolov; Cun-Zheng Ning

doi:10.1117/12.530465

11 May 2004 Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

Konstantin I. Kolokolov, Cun-Zheng Ning

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.530465
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k • p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm^-1. We also studied effects of doping on differential gain.

Citation Download Citation

Konstantin I. Kolokolov and Cun-Zheng Ning "Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.530465

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