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Proceedings Article

Field-induced THz wave emission with nanometer resolution

[+] Author Affiliations
Tao Yuan, Jingzhou Xu, X.-C. Zhang

Rensselaer Polytechnic Institute (USA)

Hongkyu Park, Haewook Han

Rensselaer Polytechnic Institute (USA) and Pohang Univ. of Science and Technology (South Korea)

Proc. SPIE 5649, Smart Structures, Devices, and Systems II, 1 (March 09, 2005); doi:10.1117/12.606025
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From Conference Volume 5649

  • Smart Structures, Devices, and Systems II
  • Said F. Al-Sarawi
  • Sydney, Australia | December 12, 2004

abstract

A scanning near-field microscope provides nano-scale imaging capability of field induced THz wave emission spectra from semiconductor surfaces and interfaces. Combined with a scanning probe tip and femtosecond optical pulse excitation, THz wave emission with sub-100 nm spatial resolution has been demonstrated. The scanning probe tip modulates semiconductor surface field with nano-scale accuracy through the imaging charge dipole, the tunneling current, or the contact current. The modulated THz wave from the highly localized area under the scanning tip is detected in time-domain. This aperture-less imaging method leads the way to study nano-scale to atomic level emission spectroscopy at THz frequency range.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Tao Yuan ; Hongkyu Park ; Jingzhou Xu ; Haewook Han and X.-C. Zhang
"Field-induced THz wave emission with nanometer resolution", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, 1 (March 09, 2005); doi:10.1117/12.606025; http://dx.doi.org/10.1117/12.606025


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