High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Stanley Tsao; Kan Mi; John Szafraniec; Wei Zhang; Ho-chul Lim; Bijan Movaghar; Manijeh Razeghi

doi:10.1117/12.597208

25 March 2005 High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Stanley Tsao, Kan Mi, John Szafraniec, Wei Zhang, Ho-chul Lim, Bijan Movaghar, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.597208
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3x10¹¹ cmHz1/2/W at 77K and 1.2x10¹⁰ cmHz^1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

Citation Download Citation

Stanley Tsao, Kan Mi, John Szafraniec, Wei Zhang, Ho-chul Lim, Bijan Movaghar, and Manijeh Razeghi "High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.597208

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