PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices

Lech Wosinski; Jayanta K. Sahu; Matteo Dainese; Harendra Fernando

doi:10.1117/12.406444

15 December 2000 PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices

Lech Wosinski, Jayanta K. Sahu, Matteo Dainese, Harendra Fernando

Author Affiliations +

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406444
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

Silica based planar technology on silicon has been identified as a very serious source of devices for optical communication s:ystems. Low temperature fabrication of passive and active structures is of special interest as it allows monolithic integration with temperature sensitive semiconductor components on a common silicon platform. Standard PEC\'D (Plasma Enhanced Chemical Vapour Deposition) processing for fabrication of silica based optical waveguides has been investigated to optimize the process parameters. We chose a high power process regime with high ratio between nitrous oxide and silane gas flows as the best conditions. Significant improvement in optical properties of silica-on-silicon planar waveguides for optical communication in the 1.50 -1 .55 tmwavelength range has been obtained.

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Lech Wosinski, Jayanta K. Sahu, Matteo Dainese, and Harendra Fernando "PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406444

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