Metrology issues associated with submicron linewidths

Khoi A. Phan; John L. Nistler; Bhanwar Singh

doi:10.1117/12.44455

1 July 1991 Metrology issues associated with submicron linewidths

Khoi A. Phan, John L. Nistler, Bhanwar Singh

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44455
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The three conventional techniques--optical, low voltage scanning electron microscopy (LVSEM), and electrical linewidth measurement--continue to be employed, but each technique has unique applications, problems, and limitations. In this paper these techniques are investigated for submicron linewidth metrology. A great deal of emphasis is placed on the calibration of these tools and the potential for problems associated with the tools.

Citation Download Citation

Khoi A. Phan, John L. Nistler, and Bhanwar Singh "Metrology issues associated with submicron linewidths", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44455

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