Paper
20 June 1985 Repair Of Photomasks With Focussed Ion Beams
B. W. Ward, D. C. Shaver, M. L. Ward
Author Affiliations +
Abstract
The development of high-brightness liquid metal ion sources [1] has made it possible to produce focussed ion beams with submicrometer dimensions and moderate current density (about 1 A/cm2). Several classes of applications for focussed ion beam systems have been proposed including direct implantation, lithography, and micromachining. Though focussed ion beams have some unique and attractive properties, they are unlikely to replace mainstream lithography and broad-beam implantation technologies. For instance, for applications such as high-dose source-drain implantations, the writing rate would be limited to only a few thousand pixels per second, resulting in excessive writing times. On the other hand, for certain niche applications a focussed ion beam may be the method of choice. As an example, a custom wafer requiring threshold adjustment implants (1013 cm-2 and 1% coverage) could be processed in less than an hour and would require no mask generation or resist processing and exposure steps.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. W. Ward, D. C. Shaver, and M. L. Ward "Repair Of Photomasks With Focussed Ion Beams", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947491
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CITATIONS
Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

Ion beams

Ions

Glasses

Imaging systems

Lithography

Opacity

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