KEYWORDS: Resistance, Silver, Copper, Temperature metrology, Metals, Polymers, Interference (communication), Digital signal processing, Transformers, Nanowires
Nanowires with high aspect ratio can become unstable due to Rayleigh-Plateau instability. The instability sets in below a certain minimum diameter when the force due to surface tension exceeds the limit that can lead to plastic flow as determined by the yield stress of the material of the wire. This minimum diameter is given dm ≈ 2σS/σY , where σS is the surface tension and σY is the Yield force. For Ag and Cu we estimate that dm ≈ 15nm. The Rayleigh instability (a classical mechanism) is severely modified by electronic shell effect contributions. It has been predicted recently that quantum-size effects arising from the electron confinement within the cross section of the wire can become an important factor as the wire is scaled down to atomic dimensions, in fact the Rayleigh instability could be completely suppressed for certain values of kF r0. Even for the stable wires, there are pockets of temperature where the wires are unstable. Low-frequency resistance fluctuation (noise) measurement is a very sensitive probe of such instabilities, which often may not be seen through other measurements. We have studied the low-frequency resistance fluctuations in the temperature range 77K to 400K in Ag and Cu nanowires of average diameter ≈ 15nm to 200nm. We identify a threshold temperature T* for the nanowires, below which the power spectral density SV(f) ~1/f. As the temperature is raised beyond T* there is onset of a new contribution to the power spectra. We link this observation to onset of Rayleigh instability expected in such long nanowires. T* ~ 220K for the 15nm Ag wire and ~ 260K for the 15nm Cu wire. We compare the results with a simple estimation of the fluctuation based on Rayleigh instability and find good agreement.
We have studied the conductance fluctuations in silver nanowires in the temperature range 4K to 375K. The nanowires with an average diameter of 15nm were electrochemically deposited using polycarbonate membrane as template. Principal motivation is to study low frequency defect relaxations in the nanowires that give rise to conductance fluctuations with a spectral power S(f) ∝ 1/fα. The Ag nanowires, stabilized at 400K with a current of few mA, show metallic temperature dependence. The S(f) was measured with a psuedo 4 probe ac technique with rms current of few tens of μA. We find that SV(f) (which is ∝1/fα) shows a rapid rise at around 220K as T is increased along with an enhancement in the exponent α. The exponent α≈1-1.1 for T<220 and it increases to ≈1.4 at T=375K. In the same temperature range S(f) rises by an order of magnitude. We analyze the data using a model assuming that there are two components to the 1/fα fluctuations--one arising from relaxation of local defects give α≈1. The other arises from the long-range diffusion of defects characterized by α≈3/2. It is seen that for T < 220K the noise arises mainly from local defect relaxation and the temperature dependence of a follows the Dutta-Horn model. Above this temperature the contribution from long-range diffusion dominates with the noise becoming thermally activated with an activation energy (~300meV). Interestingly the activation energy is similar to but somewhat higher than that seen in micron sized films.
We have investigated the dynamics of co-existing phases in the Charge Ordered (CO) manganite Pr0.63Ca0.37MnO3 using the technique of conductance noise spectroscopy. We note that close to the CO transition temperature Tco the spectral power of Sv(f)/V2 deviates significantly from the 1/f frequency dependence for f≤0.12Hz. Our analysis shows that this deviation can be described by a single frequency Lorentzian with corner frequency fc in addition to the usual broadband 1/f noise. Such a Lorentzian contribution to Sv(f)/V2 can come from a two level system (TLS). In the time serioues this shows up as RTN. For T≤Tco the system shows the onset of a non-linear conduction close to a threshold value Jdc = Jth the noise spectra is mainly 1/f in nature. For J > Jth a large low frequency component of noise (characterized again by a frequency fc) appears. We associate fc with the relaxation time tc of the TLS fluctuator so the tc = 1/fc. For thermal activation of the TLS the temperature dependence of fc will follow fc=foexp(-Ea/kBT) where Ea is an energy barrier. The value of fc shows an increase with Jdc showing that the value of the activation energy Ea is being lowered by the applied bias.
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