Prof. Mark Hopkinson Profile

Prof. Mark Hopkinson

Professor at Univ of Sheffield

SPIE Involvement:

Author

Publications (35)

Proceedings Article | 2 March 2020 Presentation + Paper

Generating optical frequency combs via nanoscale photonic structures

Henry Francis, Si Chen, Kai-Jun Che, Xiao-Dong Zhang, Mark Hopkinson, Chao-Yuan Jin

Proceedings Volume 11274, 1127412 (2020) https://doi.org/10.1117/12.2546061

KEYWORDS: Waveguides, Modulation, Modulators, Phase shift keying, Refractive index, Frequency combs, Phase modulation, Microwave photonics, Photonic crystals, Nanophotonics

Read Abstract +

Proceedings Article | 2 March 2020 Presentation + Paper

In-situ laser interference patterning of MBE growth surfaces

Yun Ran Wang, Mark Hopkinson, Im Sik Han, Chao Yuan Jin

Proceedings Volume 11268, 112680U (2020) https://doi.org/10.1117/12.2544992

KEYWORDS: Optical lithography, Indium, Indium arsenide, Quantum dots, Diffusion, Nanostructures, Semiconducting wafers, Gallium arsenide, Electron beam lithography, Beam splitters

Read Abstract +

Proceedings Article | 2 March 2020 Presentation + Paper

Directed self-assembly of InAs quantum dots using in-situ interference lithography

Yun Ran Wang, Mark Hopkinson, Im Sik Han, Saraswati Behera, Chao Yuan Jin

Proceedings Volume 11291, 1129107 (2020) https://doi.org/10.1117/12.2544875

KEYWORDS: Indium arsenide, Quantum dots, Lithography, Diffusion, Indium, Atomic force microscopy, Gallium arsenide, Chemical species, Directed self assembly, Laser energy

Read Abstract +

Proceedings Article | 2 March 2020 Paper

Fabrication of sub-micrometer periodic nanostructures using pulsed laser interference for efficient light trapping in optoelectronic devices

S. Behera, Y. Wang, I. S. Han, C. Jin, M. Hopkinson

Proceedings Volume 11267, 112671B (2020) https://doi.org/10.1117/12.2546212

KEYWORDS: Gallium arsenide, Nanowires, Pulsed laser operation, Semiconductors, Absorption, Nanolithography, Optoelectronic devices, Finite-difference time-domain method, Absorbance, Nanostructures

Read Abstract +

Proceedings Article | 11 May 2012 Paper

Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: experiment and simulation

Stefan Breuer, Mattia Rossetti, Lukas Drzewietzki, Ivo Montrosset, Mark Hopkinson, Wolfgang Elsässer

Proceedings Volume 8432, 84320H (2012) https://doi.org/10.1117/12.927081

KEYWORDS: Quantum dot lasers, Quantum dots, Optical simulations, Resistance, Resistors, Photodiodes, Semiconductor lasers, Absorption, Reverse modeling, Pulsed laser operation

Read Abstract +

Proceedings Article | 28 April 2010 Paper

Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching

Stefan Breuer, Mattia Rossetti, Wolfgang Elsässer, Lukas Drzewietzki, Paolo Bardella, Ivo Montrosset, Michel Krakowski, Mark Hopkinson

Proceedings Volume 7720, 772011 (2010) https://doi.org/10.1117/12.854418

KEYWORDS: Resistors, Mode locking, Semiconductor lasers, Picosecond phenomena, Reverse modeling, Optical simulations, Pulsed laser operation, Resistance, Quantum dots, Quantum wells

Read Abstract +

Proceedings Article | 16 February 2010 Paper

Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices

C. Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane

Proceedings Volume 7610, 76100Q (2010) https://doi.org/10.1117/12.846621

KEYWORDS: Switching, Reflectivity, Mirrors, Switches, Absorption, Nonlinear optics, Solids, Quantum dots, Picosecond phenomena, Indium arsenide

Read Abstract +

Proceedings Article | 12 February 2010 Paper

A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP

Kristian Groom, Benjamin Stevens, Punima Greenwood, David Childs, John Roberts, Matthew Lomas, Maxime Hugues, Hifsa Shahid, Richard Hogg

Proceedings Volume 7616, 76160A (2010) https://doi.org/10.1117/12.841612

KEYWORDS: Gallium arsenide, Indium gallium phosphide, Reflectivity, Waveguides, Photonic integrated circuits, Cladding, Semiconductor lasers, Integrated circuits, Etching

Read Abstract +

Proceedings Article | 3 February 2009 Paper

Multi-contact quantum dot superluminescent diodes for optical coherence tomography

P. D. L. Greenwood, K. V. Patel, D. T. D. Childs, K. M. Groom, B. J. Stevens, M. Hopkinson, R. A. Hogg

Proceedings Volume 7230, 72300C (2009) https://doi.org/10.1117/12.808243

KEYWORDS: Optical coherence tomography, Superluminescent diodes, Quantum dots, Waveguides, Electroluminescence, Gallium arsenide, Laser damage threshold, Quantum wells, Absorption

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Comprehensive RF-domain spectral- and time-domain analysis of passively mode-locked two-section quantum-dot lasers emitting at 1.3 um

Stefan Breuer, Lukas Drzewietzki, Wolfgang Elsäßer, Mark Hopkinson, Michel Calligaro, Michel Krakowski

Proceedings Volume 6997, 69970V (2008) https://doi.org/10.1117/12.782871

KEYWORDS: Mode locking, Radio optics, Picosecond phenomena, Spectrum analysis, Semiconductor lasers, Single sideband modulation, Second-harmonic generation, Pulsed laser operation, Signal to noise ratio, Laser applications

Read Abstract +

Proceedings Article | 29 January 2008 Paper

Short-wavelength quantum cascade lasers

Dmitry Revin, Shiyong Zhang, Matthew Steer, Robert Airey, Andrey Krysa, Mark Hopkinson, Luke Wilson, Stefan Menzel, John Cockburn

Proceedings Volume 6909, 69090V (2008) https://doi.org/10.1117/12.775316

KEYWORDS: Quantum cascade lasers, Quantum wells, Laser scattering, Semiconducting wafers, Pulsed laser operation, Indium, Indium gallium arsenide, Interfaces, Scattering, Diffusion

Read Abstract +

Proceedings Article | 29 January 2008 Paper

High-performance 1300-nm InAs/GaAs quantum-dot lasers

H. Y. Liu, M. Hopkinson, K. Groom, R. Hogg, D. Mowbray

Proceedings Volume 6909, 690903 (2008) https://doi.org/10.1117/12.765735

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Scanning probe lithography, Indium arsenide, Modulation, Doping, Laser damage threshold, Continuous wave operation, Quantum dots, Temperature metrology

Read Abstract +

Proceedings Article | 11 January 2008 Paper

Effects of spacer growth temperature on the optical properties of quantum dot laser structures

N. Hasbullah, J. S. Ng, H. Y. Liu, M. Hopkinson, J. P. David, T. Badcock, D. Mowbray, A. Sanchez, R. Beanland

Proceedings Volume 6800, 68000U (2008) https://doi.org/10.1117/12.759663

KEYWORDS: Electroluminescence, Temperature metrology, Gallium arsenide, Quantum wells, Indium arsenide, Transmission electron microscopy, Quantum dots, Gallium, Quantum dot lasers, Optical properties

Read Abstract +

Proceedings Article | 16 October 2007 Paper

The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John David, Mark Hopkinson, Luke Wilson, Pantelis Aivaliotis

Proceedings Volume 6740, 67400J (2007) https://doi.org/10.1117/12.740701

KEYWORDS: Doping, Quantum dots, Quantum well infrared photodetectors, Infrared photography, Infrared radiation, Photodetectors, Gallium arsenide, Measurement devices, Spectrum analysis, Defense and security

Read Abstract +

Proceedings Article | 16 October 2007 Paper

Fabrication of InAs photodiodes with reduced surface leakage current

Andrew Marshall, Chee Hing Tan, John David, Jo Shien Ng, Mark Hopkinson

Proceedings Volume 6740, 67400H (2007) https://doi.org/10.1117/12.740700

KEYWORDS: Indium arsenide, Etching, Photodiodes, Electrons, Staring arrays, Avalanche photodetectors, Surface finishing, Wet etching, Anisotropic etching, Mid-IR

Read Abstract +

Proceedings Article | 13 June 2007 Paper

Intensity noise of ultrabroadband quantum dot light emitting diodes and lasers at 1.3µm

M. Blazek, S. Breuer, T. Gensty, W. Elsäßer, M. Hopkinson, K. Groom, M. Calligaro, P. Resneau, M. Krakowski

Proceedings Volume 6603, 66031Y (2007) https://doi.org/10.1117/12.724545

KEYWORDS: Signal to noise ratio, Laser damage threshold, Light sources, Optical filters, Light emitting diodes, Semiconductor lasers, Quantum dots, Quantum dot light emitting diodes, Precision measurement, Resonators

Read Abstract +

Proceedings Article | 22 March 2007 Paper

Maximising the gain: optimizing the carrier distribution in InGaAs quantum dot lasers

Peter Smowton, Ian Sandall, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6468, 646817 (2007) https://doi.org/10.1117/12.702733

KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

Read Abstract +

Proceedings Article | 5 October 2006 Paper

Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications

P. Aivaliotis, E. Zibik, L. Wilson, J. David, M. Hopkinson, C. Groves

Proceedings Volume 6395, 63950B (2006) https://doi.org/10.1117/12.690049

KEYWORDS: Gallium arsenide, Indium arsenide, Quantum wells, Quantum well infrared photodetectors, Quantum dots, Infrared imaging, Infrared radiation, Gallium, Absorption, Staring arrays

Read Abstract +

Proceedings Article | 3 October 2006 Paper

High power and very low noise operation at 1.3 and 1.5 um with quantum dot and quantum dash Fabry-Perot lasers for microwave links

Patrick Resneau, Michel Calligaro, Michel Krakowski, Huiyun Liu, Mark Hopkinson, André Somers, A. Forchel, Johann Peter Reithmaier

Proceedings Volume 6399, 63990K (2006) https://doi.org/10.1117/12.689797

KEYWORDS: Microwave radiation, Quantum dot lasers, Quantum wells, Quantum dots, Gallium arsenide, Laser damage threshold, High power lasers, Laser applications, Fabry–Perot interferometers, Waveguides

Read Abstract +

Proceedings Article | 27 June 2006 Paper

High-sensitivity terahertz detector using two-dimensional electron gas absorber and tunnel junction contacts as a thermometer

Dmitry Morozov, Ian Bacchus, Philip Mauskopf, Martin Elliott, Chris Dunscombe, Mohamed Henini, Mark Hopkinson

Proceedings Volume 6275, 62751P (2006) https://doi.org/10.1117/12.670218

KEYWORDS: Sensors, Superconductors, Terahertz radiation, Temperature metrology, Heterojunctions, Resistance, Phonons, Astronomy, Photons, Metals

Read Abstract +

Proceedings Article | 14 April 2006 Paper

Dilute nitride-based 1.3μm high performance lasers

P. Navaretti, C. Jin, H. Liu, R. Airey, M. Hopkinson

Proceedings Volume 6184, 61840D (2006) https://doi.org/10.1117/12.663228

KEYWORDS: Quantum wells, Nitrogen, Laser damage threshold, Plasma, Indium, Transparency, Temperature metrology, Optical properties, Luminescence, Gallium arsenide

Read Abstract +

Proceedings Article | 14 April 2006 Paper

High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

H. Liu, T. Badcock, K. Groom, M. Hopkinson, M. Gutiérrez, D. Childs, C. Jin, R. Hogg, I. Sellers, D. Mowbray, M. Skolnick, R. Beanland, D. Robbins

Proceedings Volume 6184, 618417 (2006) https://doi.org/10.1117/12.662499

KEYWORDS: Gallium arsenide, Indium arsenide, Continuous wave operation, Laser damage threshold, Modulation, Doping, Scanning probe lithography, Coating, Quantum dots

Read Abstract +

Proceedings Article | 22 February 2006 Paper

Characterisation of modulation doped quantum dot lasers

Peter Smowton, Ian Sandall, Craig Walker, John Thomson, Angela Sobiesierski, Tom Badcock, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6133, 61330T (2006) https://doi.org/10.1117/12.650682

KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

Read Abstract +

Proceedings Article | 7 February 2006 Paper

Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells

S. Ray, K. Groom, M. Beattie, H. Liu, M. Hopkinson, R. Hogg

Proceedings Volume 6129, 612907 (2006) https://doi.org/10.1117/12.644799

KEYWORDS: Indium, Quantum dots, Light emitting diodes, Quantum wells, Modulation, Gallium arsenide, Optical coherence tomography, Indium arsenide, Gallium

Read Abstract +

Proceedings Article | 7 February 2006 Paper

Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy

J. Lin, R. Hogg, M. Hopkinson, P. Fry, I. Ross, A. Cullis, R. Kolodka, A. Tartakovskii, M. Skolnick

Proceedings Volume 6129, 61290G (2006) https://doi.org/10.1117/12.644792

KEYWORDS: Gallium arsenide, Indium arsenide, Photomasks, Dielectrics, Atomic force microscopy, Scanning electron microscopy, Quantum dots, Silicon, Molecular beam epitaxy, Indium

Read Abstract +

Proceedings Article | 7 July 2005 Paper

Influence of structure and defects on the performance of dot-in-well laser structures

M. Gutierrez, M. Hopkinson, H. Y. Liu, M. Herrera, D. Gonzalez, R. Garcia

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608955

KEYWORDS: Gallium arsenide, Indium arsenide, Transmission electron microscopy, Indium gallium arsenide, Indium, Gallium, Quantum wells, Quantum dots, Atomic force microscopy, Photomicroscopy

Read Abstract +

Proceedings Article | 13 April 2005 Paper

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots

Sara Pellegrini, Gerald Buller, Leonid Karachinsky, A. Shkolnik, Nikita Gordeev, Georgy Zegrya, Vadim Evtikhiev, Ian Sellers, Maurice Skolnick, H. Liu, Mark Hopkinson

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.587846

KEYWORDS: Luminescence, Aluminum, Quantum dots, Indium arsenide, Temperature metrology, Gallium arsenide, Picosecond phenomena, Gallium, Sensors, Time metrology

Read Abstract +

Proceedings Article | 1 April 2005 Paper

Growth and characterization of multiple layer quantum dot lasers

Peter Smowton, Craig Walker, Ian Sandall, Ian Sellers, David Mowbray, Hui-Yun Liu, Marina Gutierrez, Mark Hopkinson

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.593278

KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Mode structure of quantum dot semiconductor lasers

Yann Tanguy, Jan Muszalski, John Houlihan, Guillaume Huyet, Emma Pearce, Peter Smowton, Mark Hopkinson

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545473

KEYWORDS: Near field, Quantum dots, Semiconductor lasers, Quantum dot lasers, Refractive index, Modulation, Thermal effects, Continuous wave operation, Near field optics

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots

Huei Wong, Milan Dragas, G. Ren, Judy Rorison, Mark Hopkinson

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545058

KEYWORDS: Carrier dynamics, Quantum dots, Quantum wells, Electrons, Semiconductor lasers, Laser damage threshold, Temperature metrology, Quantum efficiency, Solids, Aluminum

Read Abstract +

Proceedings Article | 16 June 2004 Paper

Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments

Alexander Tartakovskii, Kristian Groom, Ali Adawi, Aristide Lemaître, David Mowbray, Maurice Skolnick, Mark Hopkinson

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.527694

KEYWORDS: Picosecond phenomena, Photons, Indium arsenide, Gallium arsenide, Quantum dot lasers, Laser beam diagnostics, Ultrafast phenomena, Optical amplifiers, Transparency, Quantum dots

Read Abstract +

Proceedings Article | 11 May 2004 Paper

Carrier distribution, spontaneous emission, and gain in self-assembled quantum dot lasers

Peter Smowton, Emma Pearce, Julie Lutti, Daniel Matthews, Huw Summers, Gareth Lewis, Peter Blood, Mark Hopkinson, Andrey Krysa

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.530429

KEYWORDS: Quantum dots, Indium gallium arsenide, Aluminum, Gallium, Quantum dot lasers, Absorption, Quantum wells, Gallium arsenide, Temperature metrology, Indium gallium phosphide

Read Abstract +

Proceedings Article | 12 June 2001 Paper

Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes

Beng Ng, John David, Chee Tan, S. Plimmer, Graham Rees, Richard Tozer, Mark Hopkinson

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429437

KEYWORDS: Aluminum, Gallium, Diodes, PIN photodiodes, Ionization, Gallium arsenide, Solids, Reverse modeling, Silicon, Avalanche photodetectors

Read Abstract +

Proceedings Article | 2 May 1997 Paper

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

David Mowbray, Olgierd Kowalski, John Cockburn, Maurice Skolnick, Mark Hopkinson, John David

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273781

KEYWORDS: Quantum wells, Aluminum, Electrons, Heterojunctions, Luminescence, Optical spectroscopy, Spectroscopy, Absorption, Gallium, Gallium arsenide

Read Abstract +

Proceedings Article | 1 July 1992 Paper

Microwave-modulated photoluminescence: technique and application to III-Vs (Poster Paper)

Matthew DeLong, I. Viohl, W. Ohlsen, P. Craig Taylor, Ferdynand Dabkowski, Kathleen Meehan, Jeannie Williams, Mark Hopkinson

Proceedings Volume 1678, (1992) https://doi.org/10.1117/12.60468

KEYWORDS: Microwave radiation, Modulation, Luminescence, Indium gallium phosphide, Spectroscopy, Semiconductors, Excitons, Zinc, Temperature metrology, Thermal effects

Read Abstract +

Showing 5 of 35 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years