Dr. Mingle Liao Profile

Dr. Mingle Liao

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Proceedings Article | 1 February 2024 Paper

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Wenjie Wang, Mingle Liao, Siyuan Luo, Feng Huang

Proceedings Volume 13068, 130681L (2024) https://doi.org/10.1117/12.3016335

KEYWORDS: Quantum wells, Gallium nitride, Barrier layers, Polarization, Conduction bands, Blue lasers, Quantum fields, Quantum confinement

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The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by Crosslight Software. Compared with the Al_0.322In_0.08Ga_0.598N EBL, the Al_0.447In_0.174Ga_0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al_0.447In_0.174Ga_0.379N electron barrier material with higher Al component further reduces the polarization effect, thus improving the hole injection efficiency and reducing the electron leakage. Simulation results reveal that the threshold current decreases from 25.3mA to 22.6mA, and the output power increases from 98.3mW to 155.9mW. At the same time, the optical field distribution of higher Al component EBL structure laser is more concentrated in the active region, which further reduces the absorption loss, so that the optical confinement factor increases from 1.14% to 1.2%, and the slope efficiency also increases from 0.77W/A to 1.18W/A.

Proceedings Article | 10 September 2022 Paper

Influence of asymmetric well/barrier layers on the performance of InGaN quantum well lasers

Wenjie Wang, Mingle Liao, Jun Yuan, Feng Huang

Proceedings Volume 12328, 1232804 (2022) https://doi.org/10.1117/12.2644187

KEYWORDS: Quantum wells, Indium gallium nitride, Gallium nitride, Semiconductor lasers, Refractive index, Optical simulations

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The structural parameters of the quantum well have a very important influence on the performance of InGaN laser, including output power, optical field distribution, electron leakage, etc., so it needs to be considered in the design. The photoelectric performance of InGaN/(In)GaN quantum well lasers with varying thickness of quantum well/barrier layers are theoretically investigated with the simulation program Crosslight. For three In_0.15Ga_0.85N/GaN quantum wells violet laser diode (LD) with lasing wavelength around 410 nm, the performance of threshold current and optical output power of the laser degenerates with the uneven well thickness. This is attributed to the deterioration of the carrier distribution and the mode gain in quantum wells. When the quantum well structure adopts barrier layers with non-uniform thickness, the threshold current of InGaN quantum well laser degenerates a little while the lasers’ optical output power increase slightly. Based on the In_0.15Ga_0.85N/In_0.02Ga_0.98N quantum well, the larger refractive index difference between the barrier layer and the well layer significantly improves the distribution and concentrates of the optical field near the active region. Meanwhile, compared with In_0.15Ga_0.85N/GaN structure, In_0.15Ga_0.85N/In_0.02Ga_0.98N quantum well laser is more effective in reducing the electron leakage. Moreover, the output power of gradually thickening barrier laser achieves 2.6 times that of the In_0.15Ga_0.85N/GaN symmetric quantum well structure. Our results prove that the asymmetric quantum wells with higher refractive index and gradually thickening barrier layer are beneficial to realize low threshold current and high output power laser.

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