Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on
copper phthalocyanine. Traps have been created by varying the deposition flux. The high deposition flux induces the
structural disorder evident from the broad and low intensity X-ray peak. These structural disorders give rise to the traps
that clearly shows its signature in C-T characteristics. The step in temperature stimulated capacitance (TSCAP)
measurements provides the information of trap level. It is shown that structural disorder is responsible for traps in CuPc
thin films and controls the electrical characteristics of two and three terminal devices.
We have fabricated organic complementary
inverter comprised of p-channel copper phthalocyanine(CuPc)
and n-channel hexadecafluoro phthalocyanine (F16CuPc) based
organic thin film transistors (OTFTs) with single Cu metal
electrode for both type of OTFTs. The work function of Cu is
nearly equal to the highest occupied molecular orbital (HOMO)
of CuPc and lowest unoccupied molecular orbital (LUMO) of
F16CuPc hence it can be used as source/drain electrode for both
type of OTFTs which shows field effect mobilities of CuPc and
F16CuPc based OTFTs are 1.27x10-3cm2V-1S-1 and 3.30x10-4cm2V-
1S-1 respectively. Voltage transfer characteristics of
complementary inverter show high noise margins and switching
voltage around VDD/2 with a maximum gain in the order of 20.
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