The pnp SiGe HBT on thin film SOI is investigated with different Ge profiles using 2D numerical simulations in
MEDICI. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and
breakdown voltage is obtained for a 0.09 × 1.0 μm2 pnp SiGe HBT with triangular (0%-30%), trapezoidal (10%-
20%) and box (15%) Ge profiles in the base layer. The results obtained with the Ge profiles, has been analyzed and
compared. The Ft BVCEO product for triangular, trapezoidal and box Ge profiles has been found as 190.8, 401, and
359.6 GHzV respectively. The tradeoff between voltage gain and unity current gain frequency for the Ge profiles
has been analyzed. The simulation result suggests that the pnp SiGe HBT on thin film SOI with trapezoidal Ge
profile is a potential candidate for the high speed complementary bipolar circuits that can be used in high
performance mixed signal applications.
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