This paper reports cantilever-type nano-electro-mechanical systems (NEMS) silicon carbide (SiC) switches capable of
operation from 25°C to 600°C, with threshold voltages ≤5 V. The fabricated SiC switches are actuated electrostatically,
wherein the suspended cantilever electrode is pulled down to contact the bottom stationary electrode. The switches,
fabricated using surface micromachining, have electrode separation gaps determined by the ~75 nm-thick sacrificial
SiO2. Two-terminal switches have been cycled more than 40 billion times at room temperature until failure and more
than 2 million times at 600°C when the package wire bonds fail. The room temperature failure mechanisms of these
switches are mechanical fracture and stiction. Stiction of the switch electrodes is strongly correlated to the roughness of
their contacting surfaces. Measurements indicate that 60% of switches with 8 nm electrode surface roughness could be
operated over billions cycles before fracture. In contrast, 85% of the switches with 1 nm roughness were stuck after
fabrication release.
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