Terahertz (THz) detector indicates great potentials in detecting application because of real-time, compact bulk and unique spectral characteristics. Small dimension and integration THz detectors based on resonance cavity structure were designed and simulated to get optimizing THz detector parameters from the simulation results of membrane temperature changing. The THz detector was fabricated with complex semiconductor process and three dimension thermal variation of resonance cavity were obtained by simulation to identify the resonance cavity design. The electrical response time of THz detector could be as low as 5ms, which is suitable for the application of fast response THz detecting.
A terahertz (THz) microbolometer detector and corresponding real-time imaging system were introduced in this paper. A 10nm NiCr thin film was integrated in the micro-bridge structure as the THz absorption layer by magnetron sputtering and reactive ion etching (RIE), and its improvement of THz absorption was verified by optical characteristics test. Through complicated semiconductor process, a microbolometer detector of 320×240 THz focal plane array (FPA) was prepared. And a real-time imaging system was established to identify the perfomance of this detector. The results demonstrated that the detector could get conscious THz image using a 2.52 THz far-infrared gas laser as THz radiation source.
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