Design Issues For Monolithic Gallium Arsenide On Silicon Devices

P. Christie; A. M. Barnett; K. D. Hobart; G. H. Negley

doi:10.1117/12.967512

1 January 1987 Design Issues For Monolithic Gallium Arsenide On Silicon Devices

P. Christie, A. M. Barnett, K. D. Hobart, G. H. Negley

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967512
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Hybrid systems which merge silicon (Si) and gallium arsenide (GaAs) devices will produce a technology which combines high performance with ease of fabrication. Such heteroepitaxial optoelectronic circuits can help alleviate the interchip communication bottleneck created by present day VLSI technology and provide substantial immunity to electromagnetic interference. This paper describes the selective area growth of GaAs on Si for optical interconnects. The design issues and conflicts inherent in the fabrication of optical interconnects are discussed. Data relating to the monolithic integration of GaAs light emitting diodes (LED's) and Si field effect transistor (FET) drivers is presented.

Citation Download Citation

P. Christie, A. M. Barnett, K. D. Hobart, and G. H. Negley "Design Issues For Monolithic Gallium Arsenide On Silicon Devices", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967512

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