High-performance GaAs on silicon technology for VLSI, MMICs, and optical interconnects

Aristos Christou

doi:10.1117/12.24371

1 March 1991 High-performance GaAs on silicon technology for VLSI, MMICs, and optical interconnects

Aristos Christou

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24371
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

As a result of the ever decreasing cost and increasing speed performance and integration level of Silicon VLSI the large scale use of high-speed GaAs digital IC''s will only occur if a dramatic decrease in cost occurs coupled with the attainment of a radiation hard-high performance technology. The larger scale fabrication of GaAs circuits allowed by the use of Si and SIMOX substrates will permit the attainment of such a low cost high reliability technology. In addition the present evolution of electronic circuits towards monolithic integration makes it very desirable to combine functions which are not attainable with devices stemming from only one material. The present paperreviews the recent material and device developments for GaAs on silicon and also extends the discussion to GaAs on SIMOX.

Citation Download Citation

Aristos Christou "High-performance GaAs on silicon technology for VLSI, MMICs, and optical interconnects", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24371

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