High efficiency metastructure-based emitter and photodetector for imaging

Kwong-Kit Choi; Patrick Oduor; Nibir K. Dhar; Achyut K. Dutta

doi:10.1117/12.2666267

15 June 2023 High efficiency metastructure-based emitter and photodetector for imaging

Kwong-Kit Choi, Patrick Oduor, Nibir K. Dhar, Achyut K. Dutta

Proceedings Volume 12514, Image Sensing Technologies: Materials, Devices, Systems, and Applications X; 1251402 (2023) https://doi.org/10.1117/12.2666267
Event: SPIE Defense + Commercial Sensing, 2023, Orlando, Florida, United States

Abstract

In this work, we design an InGaAs avalanche photodiode (APD) with a higher photocurrent to dark current ratio than a conventional APD. The improvement is based on optical confinement in an optical resonant metastructure, which increases the optical intensity in the detector volume and thus its quantum efficiency. With optical confinement, the absorbing layer can be 20 times thinner than the conventional APD, reducing the intrinsic generation-recombination dark current by the same amount and still be able to produce 90.9% of the photocurrent. The photocurrent to intrinsic dark current ratio can thus be increased theoretically by 18.2 times in concomitant with a lower operating voltage. Higher photocurrent can also be obtained using a thicker absorber. Besides APDs, the optical resonator structure can also be applied to p-i-n photodiodes for similar improvement. To further increase the detection sensitivity, we design an efficient InGaAsP light emitting diode (LED) having a similar resonator geometry. The resonator geometry enables more collimated emission and increases the optical power theoretically by more than 36 times compared to a conventional LED. Integrating the meta- APD and LED together will yield a powerful SWIR transceiver for various low light, LIDAR, and 3-dimensional imaging applications.

Citation Download Citation

Kwong-Kit Choi, Patrick Oduor, Nibir K. Dhar, and Achyut K. Dutta "High efficiency metastructure-based emitter and photodetector for imaging", Proc. SPIE 12514, Image Sensing Technologies: Materials, Devices, Systems, and Applications X, 1251402 (15 June 2023); https://doi.org/10.1117/12.2666267

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