This PDF file contains the front matter associated with SPIE Proceedings Volume 12650, including the Title Page, Copyright information, Table of Contents, and Conference Committee information.

Diamond is semiconductor with unique properties and is under development to be employed in robust transistors. This study of Borophene and BC3 provides insight on their potential as acceptor layers over Hydrogenterminated diamond (100) (H-diamond(100))for use in diamond-based electronics. Boron-based 2D materials such as Borophene and BC3 resemble h-BN and graphene. While there has been significant recent interest in the distinctive structural and electronic properties of h-BN and graphene when interfaced with diamond surfaces, owing to their acceptor-like and contact-like characteristics, the structural and electronic interactions of borophene and BC3 with diamond in the formation of 2D/3D heterostructures remain unexplored. The goal of this work is to determine the structural and electronic properties of hydrogen terminated diamond 100 with borophene and BC3. This study used Density functional theory (DFT) calculations with Perdew–Burke-Ernzerhof(PBE) functional as implemented in GPAW and ASE framework to analyze structural and electronic properties. 2D-layers were optimized over H-diamond(100) and band structure calculation was conducted. An attempt is also made to compare the structural and electronic properties of Borophene/Diamond and BC3/Diamond heterostructures to relatively well-known hBN/Diamond heterostructure.

Tungsten oxide (WO₃), which is also known as tungsten trioxide and wide band gap semiconductor material has drawn enormous attention among researchers due to its fascinating properties. Using facile one step hydrothermal method, the synthesis and characterizations of highly crystalline 1D nanorod of WO₃ are presented in this paper with large scale production of the material. Several characterization techniques, such as transmission electron microscopy (TEM), field emission gun-scanning electron microscopy (FEG-SEM), X-ray diffraction (XRD), UV-vis spectroscopy have been employed to check the crystallinity, surface morphology, shape, and band gap of the nanomaterial. The XRD data confirms about the highly crystalline hexagonal phase of WO₃, which agrees well with the JCPDS card no – 01-085- 2459. Nanorod like morphology can be seen in the low-resolution TEM image. In the HRTEM image, the highly crystalline nature of the material is clearly visible and the obtained interplanar spacing is 0.38 nm which matches with the interplanar spacing of (002) plane. The FEG-SEM image shows the 1D nanorod morphology of the synthesized material. The diameters of the nanorods are in the range of 50-300 nm. The Fourier transform infrared spectroscopy (FTIR) revels the structural information about the synthesized material. The broad peak around 805 cm^-1 is attributed to the W-O-W bond stretching vibration. Two other peaks appeared at 1405 and 1628 cm^-1 are representing the vibration mode of W-OH bond. We have also studied the UV-vis absorption spectroscopy of the WO₃ nanorod to investigate the light absorption property of the material. The band gap obtained from the Tauc plot is 3.16 eV, indicates the wide and direct band gap formation of WO₃ nanorod. The synthesized material is suitable for various applications, such as gas sensing, UV photodetector, supercapacitor, and photocatalyst.