Presentation + Paper
8 March 2024 Scalable photodetector design with sub-picosecond response time
Author Affiliations +
Abstract
Addressing the persistent speed-efficiency trade-off, advanced photodetector designs are increasingly incorporating nanophotonic structures to enhance detection efficiency. However, contemporary detector technologies continue to grapple with issues of high-power consumption and limited scalability potential. Embedded nanostructures in photodetectors have already been demonstrated to improve efficiency, gain, and slight improvement in high-speed performance. This paper presents a unique, scalable detector design that leverages nanophotonic enhancement while delivering an ultra-high response time with sub-picosecond full-width-half-maximum for 450 nm illumination wavelength with low breakdown voltage (~8V). Our innovative design strategy involves etching nanoholes into conventional p-i-n photodetectors (1 μm absorbing layer) and doping alternate nanoholes with p+ and n+ doping. The nanoholes are etched all the way through the intrinsic layer to connect with the top and bottom highly doped p+ and n+ doped layer forming a composite vertical-lateral electric field in the photodetector. This technique drastically reduces the effective carrier transport length to mere hundreds of nanometers without diminishing the photon absorption area. As a result, the timing response improves significantly compared to conventional models achieving sharp rise time of ~0.6 ps, fall time of ~8.5 ps, and full width half maximum of <4 ps. Furthermore, the design offers scalability along with advances in lithography processes, setting a promising direction for ultra-high-speed detectors scaling down to <1 ps response time suitable for emerging applications.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Ahasan Ahamed, Amita Rawat, Lisa N. McPhillips, Shih-Yuan Wang, and M. Saif Islam "Scalable photodetector design with sub-picosecond response time", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950H (8 March 2024); https://doi.org/10.1117/12.3002441
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KEYWORDS
Picosecond phenomena

Photodetectors

Electric fields

Design

Photodiodes

Doping

PIN photodiodes

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