Dr. M. Saif Islam Profile

Dr. M. Saif Islam

Professor of Electrical and Computer Engineering at Univ of California Davis

SPIE Involvement:

Conference Program Committee | Conference Co-Chair | Editor | Author

Publications (73)

Proceedings Article | 2 October 2024 Presentation + Paper

Metasurface-enabled circular light propagation for ultra-fast and efficient photodetection

M. Saif Islam, Amita Rawat, Makoto Tsubokawa

Proceedings Volume 13114, 1311408 (2024) https://doi.org/10.1117/12.3030510

KEYWORDS: Photodetectors, Light absorption, External quantum efficiency, Ultrafast phenomena, Silicon, Wave propagation, Semiconductors, Light wave propagation, Absorption, Light scattering

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Proceedings Article | 12 March 2024 Presentation + Paper

On-chip hyperspectral detectors for fluorescence lifetime imaging

Ahasan Ahamed, Amita Rawat, Lisa McPhillips, Laura Marcu, M. Saif Islam

Proceedings Volume 12853, 1285304 (2024) https://doi.org/10.1117/12.3002476

KEYWORDS: Sensors, Fluorescence lifetime imaging, Avalanche photodetectors, External quantum efficiency, Fluorescence, Tissues, Emission wavelengths, Quantum detection, Photonic nanostructures, Fluorescence spectroscopy

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Fluorescence Lifetime Imaging (FLIM) is a powerful technique that measures the decay time of fluorophores present in tissue samples alluding to their constituent molecules. FLIM has gained popularity in biomedical imaging for applications such as detecting cancerous tumors, surgical guidance, etc. However, conventional FLIM systems are limited by a reduced number of spectral bands and long acquisition time. Moreover, the large footprint, complexity, and cost of the instrumentation make it difficult for clinical applications. In this paper, we demonstrate a reconstruction-based hyperspectral detector that can resolve decay time and intensities in broad spectral ranges while providing high sensitivity, high gain, and fast response time. The hyperspectral detector is comprised of an array of efficient, ultrafast avalanche photodetectors integrated with nanophotonic structures. We utilize different nanostructures in the detectors to modulate light-matter interactions in spectral channels. This allows us to computationally reconstruct the spectral profile of the incoming fluorescence spectrum without the need for additional filters or dispersive optics. Also, the nanophotonic structures enhance efficiency (by a factor of 2 to 10 over different wavelengths) while providing fast response time. An innovative detector design has been employed to reduce the breakdown of the avalanche photodetectors to -7.8V while maintaining high gain (~50) across the spectral range. Therefore, enabling low light detection with a high signal-to-noise ratio for FLIM applications. Added spectral channels would provide valuable information about tissue materials, morphology, and disease diagnosis. Such innovative hyperspectral sensors can now be integrated on-chip capable of miniaturizing the FLIM system and making it a commercially viable tool for clinical use. This technology has the potential to revolutionize the current FLIM system with improved detection capabilities opening doors for new horizons.

Proceedings Article | 11 March 2024 Poster + Paper

High-speed PiN photodiode design space exploration to break the speed-efficiency trade-off

Amita Rawat, M. Saif Islam

Proceedings Volume 12880, 128800Q (2024) https://doi.org/10.1117/12.3003413

KEYWORDS: PIN photodiodes, Capacitance, Picosecond phenomena, Photodiodes, Light sources and illumination, Silicon, Design, Doping

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Ever-evolving imaging and low-to-single photon-count detection applications demand high-speed, efficient, and complementary metal oxide semiconductor (CMOS) compatible photodetectors. Due to the non-overlapping research and development in the CMOS logic and optoelectronic industry, holistic system optimization is lacking. We propose a PiN device design method addressing the speed-efficiency trade-off and enabling an independent optimization of both speed and absorption efficiency. We present a hybrid device structure combining lateral and vertical PiN architectures. We introduce a highly doped buried P⁺− region connecting the top P⁺− contact doping and separating the N⁺-contact doping by a critical width. The top P⁺− and N⁺− contacts are laterally separated by an i-layer for absorption. The use of a lateral i-layer enables a larger volume for efficient photon absorption, and the presence of a highly doped P⁺− region enables an efficient collection of slow-moving holes after the illumination is turned off. The critical i-layer width sandwiched between the buried P⁺− region and the N⁺− contact doping facilitates an efficient conduction path. We optimize the critical width (optimized width = 200 nm) for device capacitance and the admittance to maximize the response time (rise time, fall time, and full-width half maxima). The optimization is performed using ATLAS Silvaco technology computer-aided design software. The optimized device structure possesses 22 GHz 3 dB bandwidth (BW = 0.35/Fall-time) at 850 nm illumination wavelength as against 0.6-10 GHz 3 dB bandwidth range for conventional PiN devices. We also show that reducing the critical width to zero results in impact ionization drive avalanche phenomenon at ∼6 V applied bias, making these devices suitable for low-power and low-photon count detection. With a large absorber width, an optimized critical conduction path, and a low-bias trigger avalanche process, the proposed photodiodes result in high-speed, high-bandwidth, low-photon count detection, essential for state-of-the-art light detection and ranging systems and the single-photon detectors for quantum communications.

Proceedings Article | 11 March 2024 Poster + Paper

Direction of arrival sensing enabled by introducing asymmetric surface structures in photodetectors

Amita Rawat, M. Saif Islam

Proceedings Volume 12880, 128800R (2024) https://doi.org/10.1117/12.3003432

KEYWORDS: Absorption, Signal to noise ratio, Photodetectors, Silicon, Light sources and illumination, Simulations, Finite-difference time-domain method, Data communications, Boundary conditions

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Proceedings Article | 9 March 2024 Presentation

Precision photon manipulation in photodetectors for AI-driven ultrafast sensing and imaging

M. Saif Islam, Ahasan Ahamed, Lisa McPhillips, Amita Rawat

Proceedings Volume PC12895, PC128950B (2024) https://doi.org/10.1117/12.3007784

KEYWORDS: Ultrafast imaging, Photodetectors, Light absorption, Biological imaging, Semiconductors, Miniature imaging systems, Imaging spectroscopy, Film thickness, Ultrafast phenomena, Spectroscopy

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Proceedings Article | 8 March 2024 Presentation + Paper

DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors

Lisa McPhillips, Amita Rawat, Ahasan Ahamed, M. Saif Islam

Proceedings Volume 12895, 128950G (2024) https://doi.org/10.1117/12.3003649

KEYWORDS: Avalanche photodetectors, Light sources and illumination, Light absorption, Photodiodes, External quantum efficiency, Photonic microstructures, Semiconducting wafers, Doping, Silicon, Quantum devices

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Proceedings Article | 8 March 2024 Presentation + Paper

Scalable photodetector design with sub-picosecond response time

Ahasan Ahamed, Amita Rawat, Lisa McPhillips, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 12895, 128950H (2024) https://doi.org/10.1117/12.3002441

KEYWORDS: Picosecond phenomena, Photodetectors, Electric fields, Photodiodes, Design, PIN photodiodes, Doping, Silicon, Dopants, Sensors

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Proceedings Article | 5 October 2023 Presentation + Paper

Advancing multi-dimensional vision: AI-driven imaging using unique photodetectors with integrated surface nanostructures

Ahasan Ahamed, Weiwei Wang, Amita Rawat, Lisa McPhillips, Ekaterina Ponizovskaya Devine, Shih-Yuan Wang, Zhi Ding, M. Saif Islam

Proceedings Volume 12651, 1265104 (2023) https://doi.org/10.1117/12.2682104

KEYWORDS: Nanostructures, Photodetectors, Artificial intelligence, External quantum efficiency, Spectrometers, Spatial resolution, Nanostructuring, Laser nanostructuring, Biomedical optics, Temporal resolution

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SPIE Journal Paper | 24 July 2023 Open Access

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Wayesh Qarony, Ahmed Mayet, Ekaterina Ponizovskaya-Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam

APN, Vol. 2, Issue 05, 056001, (July 2023) https://doi.org/10.1117/12.10.1117/1.APN.2.5.056001

KEYWORDS: Silicon, Light absorption, Photodetectors, Ultrafast phenomena, Gallium arsenide, Absorption, Quantum efficiency, Group III-V semiconductors, Fabrication, Film thickness

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SPIE Journal Paper | 20 March 2023

Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm

Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, M. Saif Islam

JNP, Vol. 17, Issue 01, 016012, (March 2023) https://doi.org/10.1117/12.10.1117/1.JNP.17.016012

KEYWORDS: Germanium, Crosstalk, Tunable filters, Simulations, Optical filters, Image sensors, Silicon, Light absorption, Quantum efficiency, Near infrared

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Proceedings Article | 3 October 2022 Presentation + Paper

Wavelength selective silicon avalanche photodiodes with controlled wide spectral gain by integrating photon-trapping microstructures

Amita Rawat, Ahasan Ahamed, Lisa Mcphillips, Busra Ergul-Yilmaz, Cesar Bartolo-Perez, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 12200, 1220005 (2022) https://doi.org/10.1117/12.2637146

KEYWORDS: External quantum efficiency, Silicon, Absorption, Avalanche photodetectors, Quantum efficiency, Avalanche photodiodes, Doping, Scanning electron microscopy, Photonic microstructures, Visual communications

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Proceedings Article | 3 October 2022 Presentation + Paper

Near-infrared sensors for high efficiency and high-temperature operation enabled by ultra-thin type-II quantum wells and photon-trapping structures

Amita Rawat, Anthony M. Chiu, Kwong-Kit Choi, Patrick Oduor, Achyut Dutta, M. Saif Islam

Proceedings Volume 12200, 1220008 (2022) https://doi.org/10.1117/12.2637151

KEYWORDS: Absorption, Quantum efficiency, Finite-difference time-domain method, Indium gallium arsenide, Quantum wells, Sensors, Photodetectors, Gallium antimonide, Optical instrument design, Modulation

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Proceedings Article | 1 June 2022 Presentation + Paper

Plants as the first responder to adverse environmental conditions

Francisco Perez, Nafize Ishtiaque Hossain, M. Saif Islam, Shawana Tabassum

Proceedings Volume 12120, 1212007 (2022) https://doi.org/10.1117/12.2618986

KEYWORDS: Humidity, Fourier transforms, Wavelets, Wavelet transforms, Temperature metrology, Sensors, Toxic gases, Signal processing, Remote sensing, Metals

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Proceedings Article | 5 March 2022 Presentation + Paper

Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet, Soroush Ghandiparsi, Gerard Ariño-Estrada, Xiangnan Zhou, Julien Bec, Shih-Yuan Wang, Laura Marcu, M. Saif Islam

Proceedings Volume 12009, 1200905 (2022) https://doi.org/10.1117/12.2610526

KEYWORDS: Avalanche photodetectors, Nanostructures, Absorption, Silicon, Photonic nanostructures, Sensors, Nanostructuring, Fluorescence lifetime imaging, Modulation, Avalanche photodiodes

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Proceedings Article | 2 March 2022 Presentation + Paper

Reconstruction-based spectroscopy using CMOS image sensors with random photon-trapping nanostructure per sensor

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Mayet, Soroush Ghandiparsi, Lisa McPhillips, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 11971, 1197106 (2022) https://doi.org/10.1117/12.2610527

KEYWORDS: Spectrometers, Photodiodes, Nanostructures, Sensors, Spectroscopy, Silicon, Quantum efficiency, Biomedical optics, Photonic nanostructures, Fluorescence lifetime imaging

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Proceedings Article | 3 August 2021 Paper

Controlling light penetration depth to amplify the gain in ultra-fast silicon APDs and SPADs using photon-trapping nanostructures

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet, Soroush GhandiParsi, Xiangnan Zhou, Julien Bec, Nibir K. Dhar, Ekaterina P. Devine, Shih-Yuan Wang, Gerard Ariño-Estrada, Laura Marcu, M. Saif Islam

Proceedings Volume 11800, 118000F (2021) https://doi.org/10.1117/12.2597835

KEYWORDS: Absorption, Silicon, Avalanche photodetectors, Photonic nanostructures, Nanostructures, Avalanche photodiodes, Etching, Photonic devices, Photodiodes, Sensors

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Proceedings Article | 1 August 2021 Paper

Surface nanostructures for engineering spectral responsivity in imaging sensor pixels for combatting deepfakes

Lisa McPhillips, Ahasan Ahamed, Cesar Bartolo-Perez, M. Saif Islam

Proceedings Volume 11841, 118410G (2021) https://doi.org/10.1117/12.2597841

KEYWORDS: Video, Cameras, Spectroscopy, Computer programming, Absorption, Photodiodes, Neural networks, Nanostructures, Optical sensors, Software development

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Proceedings Article | 5 March 2021 Presentation + Paper

Controlling the photon absorption characteristics in avalanche photodetectors for high resolution biomedical imaging

Cesar Bartolo-Perez, Soroush Ghandiparsi, Ahmed Mayet, Ahasan Ahamed, Wayesh Qarony, Hilal Cansizoglu, Yang Gao, Shih-Yuan Wang, Simon Cherry, M. Saif Islam, Gerard Ariño-Estrada

Proceedings Volume 11658, 116580B (2021) https://doi.org/10.1117/12.2577805

KEYWORDS: Absorption, Avalanche photodetectors, Image resolution, Photodetectors, Finite-difference time-domain method, Ultrafast phenomena, TCAD, Structural design, Spatial resolution, Single photon

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Proceedings Article | 21 August 2020 Presentation

Opening remarks from Conference Chairs for the Low-Dimensional Materials and Devices Conference (#11465)

Albert Davydov, Nobby Kobayashi, Alec Talin, Saif Islam

Proceedings Volume 11465, 1146503 (2020) https://doi.org/10.1117/12.2580621

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Proceedings Article | 13 May 2019 Paper

Transfer of ordered and disordered Si nanowires onto alien substrates for the fabrication of third-generation solar cells

Hakan Karaagac, Ozge Guller, Elif Peksu, Eray Humali, Makbule Terlemezoglu, Mehmet Parlak, Saif Islam

Proceedings Volume 10982, 1098205 (2019) https://doi.org/10.1117/12.2518610

KEYWORDS: Silicon, Solar cells, Polymethylmethacrylate, Scanning electron microscopy, Copper, Thin films, Nanowires, Image processing, Crystals, Thin film solar cells

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Proceedings Article | 7 May 2019 Paper

Ultra-thin super absorbing photon trapping materials for high-performance infrared detection

Hossein Rabiee-Golgir, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Ahmed Mayet, Cesar Bartolo-Perez, Priyalal Wijewarnasuriya, Nibir Dhar, M. Saif Islam

Proceedings Volume 11002, 110020T (2019) https://doi.org/10.1117/12.2518690

KEYWORDS: Infrared detection

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The performance of mid- and long-wavelength infrared (IR) detectors is still restricted with the dark current characteristics and associated noise behavior. In this work, we propose reducing the dark current and related noise of the IR detectors to elevate high operating temperature and improve the detector quantum efficiency (QE), by using a thin absorption layer of IR absorbing materials like lead selenide (PbSe) and mercury cadmium telluride (HgCdTe). A photon bending and trapping mechanism based on integrated micro/nanoscale holes was employed to ensure high quantum efficiency despite using a thin absorbing layer. Using finite-difference time-domain (FDTD) method, the effect of embedded hole arrays on the optical absorption enhancement of ultra-thin PbSe and HgCdTe has been investigated. The calculated optical absorptions in ultra-thin IR structures without holes were compared with that of similar structures embedded with hole arrays. The optical absorption in 2 μm thick PbSe film without holes is less than 5% for 3-5 μm mid-IR wavelengths. Although applying conventional anti-reflecting (AR) coatings leads to a slightly higher absorption, it can cause higher dark current due to increased surface traps. Integration of hole arrays in 2 μm thick PbSe film has shown a significant optical absorption enhancement, up to 20% at 4.5 μm wavelength. This is equivalent to more than 2- and 4-folds' enhancement compared to a 2 μm thick flat-surface structure with AR and without AR, respectively. In addition, embedding the hole arrays in 1.2 μm thick HgCdTe IR films enhances the optical absorption up to 75% at 4.5 μm, which is more than 4 times higher than that in HgCdTe structure without holes. Additionally, the optical absorption in 1.2 μm thick HgCdTe film with periodic array of photon-trapping micro-holes enhances to 27% at 10 μm, long-IR wavelength. This is more that 3 times higher than that in HgCdTe films without holes. Our work revealed that the embedding hole arrays not only enhances the optical absorption in IR ultra-thin structures but also can reduce that material filling ratio to ~50%, which leads to a lower dark current, ensuring higher temperature operation of the IR detectors.

Proceedings Article | 17 September 2018 Presentation

Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Kazim Polat, Hasina Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, Saif Islam

Proceedings Volume 10725, 107250B (2018) https://doi.org/10.1117/12.2323457

KEYWORDS: Palladium, Receivers, Nanostructures, Silicon, Ultrafast phenomena, Optical interconnects, Photodetectors, Integrated optics, Germanium, Semiconductors

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Development of cost-effective and power-efficient optical interconnects is required to meet high demand of data transfer in the era of Internet of Things (IoT) that is expected to connect billions of sensors with different functionalities. The cost of optical links must be reduced for a wide adoption of optical interconnects in the fast data transmission systems. Monolithic integration of ultra-fast photodetectors (PDs), one of the major components of optical receivers-with CMOS/BiCMOS circuits, can reduce the cost dramatically. However, expensive material systems and non-CMOS-compatible processing utilized in the current high-speed photodetectors do not promise a monolithic integration to the required circuitry in the near future. On the other hand, high speed PDs with CMOS-compatible material systems such as silicon (Si), germanium (Ge) or SiGe alloys have poor responsivity for the wavelengths of interest at data rates 10 Gb/s or higher. Our solution to this problem is to increase the optical absorption properties of the semiconductor by introducing micro-/nanoscale air holes to the material. Such micro/nanoholes support an ensemble of modes that propagate laterally inside in a very thin layer of semiconductor (<2µm) which is required for high speed operations. The recent demonstration of surface-illuminated high-speed (>25Gb/s) and high efficiency (>50%) Si PDs with integrated micro-/nanoholes proved that light bending can enable ultra-fast Si-based PDs for monolithic integration with CMOS/BiCMOS circuits to realize cost-effective all-Si optical receivers. In this talk, a review of state-of-the art ultra-fast Si PDs for short-reach data communication will be presented and high speed and high efficiency PDs with alternative Si-based material systems will be demonstrated for the applications in long-reach optical links. Future opportunities that light-bending phenomenon can offer in high performance PD design for various applications such as single photon detection, LIDAR and high-performance computing will be discussed.

Proceedings Article | 17 September 2018 Presentation

High efficiency flexible silicon photodetectors and photovoltaics (Conference Presentation)

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Ekaterina Ponizovskaya, Toshishige Yamada, Aly ElRefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10725, 107250F (2018) https://doi.org/10.1117/12.2323845

KEYWORDS: Silicon, Photodetectors, Photovoltaics, Crystals, Internet, Manufacturing, Photodiodes, Solar cells, Optical fiber cables, Receivers

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Proceedings Article | 31 May 2018 Paper

Black holes enabled light bending and trapping in ultrafast silicon photodetectors

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Cesar Bartolo Perez, Hasina Mamtaz, Mehmet Cansizoglu, Toshishige Yamada, Ekaterina Ponizovskaya Devine, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10639, 106390I (2018) https://doi.org/10.1117/12.2309830

KEYWORDS: Silicon, Absorption, Palladium, Data communications, Photons, Reflection, Ultrafast phenomena, Photodetectors, Refractive index, Semiconductors

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Proceedings Article | 21 September 2017 Presentation + Paper

Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices

Howard Mao, Badriyah Alhalaili, Ahmet Kaya, Daniel Dryden, Jerry Woodall, M. Saif Islam

Proceedings Volume 10381, 103810B (2017) https://doi.org/10.1117/12.2278843

KEYWORDS: Gallium, Nanowires, Gallium arsenide, Scanning electron microscopy, Oxidation, Nanostructures, Arsenic, Nanolithography, Photodetectors, Thin films

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Proceedings Article | 25 August 2017 Paper

Highly efficient silicon solar cells designed with photon trapping micro/nano structures

Cesar Bartolo-Perez, Yang Gao, Hilal Cansizoglu, Soroush Ghandiparsi, Ahmet Kaya, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103491D (2017) https://doi.org/10.1117/12.2276633

KEYWORDS: Solar cells, Photonic microstructures, Silicon, Photovoltaics, Absorption, Fabrication, Wet etching, Dry etching, Etching, Silicon solar cells

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Proceedings Article | 25 August 2017 Presentation + Paper

Fabrication of effective photon trapping and light manipulating micro/nano structures

Yang Gao, Hilal Cansizoglu, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ekaterina Ponizovskaya Devine, Aly Elrefaie, Shih-yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103490T (2017) https://doi.org/10.1117/12.2276503

KEYWORDS: Photonic microstructures, Fabrication, Silicon, Germanium, Absorption, Wet etching, Dry etching, Etching, Nanofabrication, Time correlated photon counting

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Proceedings Article | 25 August 2017 Paper

Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Mehmet Cansizoglu, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103491C (2017) https://doi.org/10.1117/12.2276612

KEYWORDS: Photonic microstructures, Ultrafast phenomena, Silicon, Photodetectors, Photodiodes, Data communications, Computer networks, Absorption

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Proceedings Article | 25 August 2017 Presentation + Paper

Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Ahmet Kaya, Cesar Bartolo Perez, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Mehmet Cansizoglu, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103490U (2017) https://doi.org/10.1117/12.2276611

KEYWORDS: Silicon, Quantum efficiency, Photodetectors, Nanostructures, Photonic microstructures, Silicon photonics, Absorption, Photovoltaics

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Proceedings Article | 27 September 2016 Presentation + Paper

Inhibiting device degradation induced by surface damages during top-down fabrication of semiconductor devices with micro/nano-scale pillars and holes

Ahmed Mayet, Hilal Cansizoglu, Yang Gao, Ahmet Kaya, Soroush Ghandiparsi, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 9924, 99240C (2016) https://doi.org/10.1117/12.2241736

KEYWORDS: Oxidation, Semiconductors, Oxides, Diodes, Silicon, Etching, Ions, Deep reactive ion etching, Reactive ion etching, PIN photodiodes

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Proceedings Article | 19 September 2016 Presentation + Paper

Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient

Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed Mayet, Hasina Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, M. Saif Islam

Proceedings Volume 9957, 995709 (2016) https://doi.org/10.1117/12.2239177

KEYWORDS: Sol-gels, Thin films, Capacitance, Interfaces, Silicon, Dielectrics, Resistance, Gallium, Diodes, Semiconductors

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Proceedings Article | 16 September 2016 Paper

Efficient Si photovoltaic devices with integrated micro/nano holes

Hilal Cansizoglu, Yang Gao, Ahmet Kaya, Soroush Ghandiparsi, Kazim Polat, Yichuan Wang, Runzhou Zhang, Hind Reggad, Ahmed Mayet, Ekaterina Ponizovskaya Devine, M. Saif Islam

Proceedings Volume 9924, 99240V (2016) https://doi.org/10.1117/12.2241794

KEYWORDS: Silicon, Photovoltaics, Crystals, Solar energy, Ions, Oxides, Oxidation, Solar cells, Absorption, Scanning electron microscopy

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Proceedings Article | 16 September 2016 Paper

Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient

Ahmet Kaya, Hilal Cansizoglu, Hasina Mamtaz, Ahmed Mayet, M. Saif Islam

Proceedings Volume 9924, 99240U (2016) https://doi.org/10.1117/12.2239341

KEYWORDS: Zinc oxide, Heterojunctions, Thin films, Aluminum, Silicon, Silicon films, Doping, Diodes, Information operations, Sodium

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Proceedings Article | 17 May 2016 Paper

Development of FDTD simulation tool for designing micro-nanostructured based optical devices

Anil Shrestha, Genki Mizuno, Patrick Oduor, Saif Islam, Achyut Dutta, Nibir Dhar

Proceedings Volume 9865, 986506 (2016) https://doi.org/10.1117/12.2230452

KEYWORDS: Finite-difference time-domain method, Computer simulations, Optical components, MATLAB, Algorithm development, Maxwell's equations, Computing systems, Magnetism, Oscillators, Optical design

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Proceedings Article | 9 September 2015 Presentation + Paper

Deposition and characterizations of ultrasmooth silver thin films assisted with a germanium wetting layer

Junce Zhang, David Fryauf, Juan J. Diaz Leon, Matthew Garrett, Logeeswaran VJ, Saif M. Islam, Nobuhiko Kobayashi

Proceedings Volume 9553, 955314 (2015) https://doi.org/10.1117/12.2189857

KEYWORDS: Germanium, Silver, Thin films, Surface roughness, Silica, X-rays, FT-IR spectroscopy, Crystals, Thin film deposition, Self-assembled monolayers

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Proceedings Article | 5 September 2015 Presentation + Paper

Theoretical limits of the multistacked 1D and 2D microstructured inorganic solar cells

Emre Yengel, Hakan Karaagac, Logeeswaran VJ, M. Saif Islam

Proceedings Volume 9561, 956103 (2015) https://doi.org/10.1117/12.2188355

KEYWORDS: Solar cells, Silicon, Germanium, Absorption, Semiconductors, Crystals, Reflection, Semiconducting wafers, Thin films, Manufacturing

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Proceedings Article | 26 August 2015 Presentation + Paper

Synthesis of one-dimentional nanostructures for gas sensing and photovoltaic applications

Hakan Karaagac, Elif Peksu, M. Saif Islam

Proceedings Volume 9553, 95530S (2015) https://doi.org/10.1117/12.2190850

KEYWORDS: Solar cells, Silicon, Thin films, Zinc oxide, Thin film solar cells, Gas sensors, Etching, Ionization, Nanostructures, Nanowires

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Proceedings Article | 18 May 2015 Paper

High efficiency c-Si solar cells utilizing light-trapping phenomenon

Anil Shrestha, Genki Mizuno, Patrick Oduor, Robert Olah, Saif Islam, Achyut Dutta, Nibir Dhar

Proceedings Volume 9493, 94930E (2015) https://doi.org/10.1117/12.2183411

KEYWORDS: Solar cells, Absorption, Silicon, Interfaces, Polymers, Antireflective coatings, Nanostructures, Reflection, Standards development, Nanowires

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Proceedings Article | 19 September 2013 Paper

Fabrication of ambipolar gate-all-around field-effect transistors using silicon nanobridge arrays

Jin Yong Oh, Jong-Tae Park, M. Saif Islam

Proceedings Volume 8820, 882002 (2013) https://doi.org/10.1117/12.2023900

KEYWORDS: Electrodes, Silicon, Field effect transistors, Gold, Oxides, Bridges, Molecular bridges, Nanoparticles, Nanolithography, Nanowires

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Proceedings Article | 19 October 2012 Paper

3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

Hakan Karaagac, Logeeswaran V. J., M. Saif Islam

Proceedings Volume 8467, 84670Y (2012) https://doi.org/10.1117/12.945974

KEYWORDS: Zinc oxide, Silicon, Heterojunctions, Optoelectronic devices, Gas sensors, Ultraviolet radiation, Solar cells, Ionization, Scanning electron microscopy, Nanowires

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Proceedings Article | 11 October 2012 Paper

Enhanced field ionization current enabled by gold induced surface states to silicon nanowires

Hakan Karaagac, M. Saif Islam

Proceedings Volume 8467, 84670J (2012) https://doi.org/10.1117/12.945971

KEYWORDS: Ionization, Silicon, Oxygen, Gas sensors, Gold, Gases, Etching, Chemical species, Particles, Nanowires

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Proceedings Article | 17 September 2011 Paper

Synthesis of crystalline ZnO nanostructures on arbitrary substrates at ambient conditions

Phani Vabbina, Prashant Nayyar, Avinash Nayak, Aaron Katzenmeyer, Logeeswaran VJ, Nezih Pala, M. Saif Islam, A. Talin

Proceedings Volume 8106, 81060H (2011) https://doi.org/10.1117/12.899418

KEYWORDS: Zinc oxide, Ultraviolet radiation, Silicon, Zinc, Crystals, Nanostructures, Transmission electron microscopy, Aluminum, Scanning electron microscopy, Nanowires

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Proceedings Article | 28 August 2010 Paper

In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

Ja-Yeon Kim, Min-Ki Kwon, Logeeswaran J., Sonia Grego, M. Saif Islam

Proceedings Volume 7768, 77680R (2010) https://doi.org/10.1117/12.861607

KEYWORDS: Silicon, Chlorine, Resistance, Silica, Hydrogen, Thin films, Electrodes, Image processing, Gold, Nanowires

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Proceedings Article | 28 August 2010 Paper

Temperature-dependent structural characterization of silicon <110> nanowires

Min-Ki Kwon, Ja-Yeon Kim, Logeeswaran J., Yi-Ju Teng, Hui-Lin Hsu, Patricia Abellán Baeza, Ilke Arslan, M. Saif Islam

Proceedings Volume 7768, 77680H (2010) https://doi.org/10.1117/12.861606

KEYWORDS: Silicon, Gold, Field effect transistors, Chemical vapor deposition, Transmission electron microscopy, Thin films, Oxides, Annealing, Scanning electron microscopy, Nanowires

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Proceedings Article | 5 May 2010 Paper

Enhanced field ionization/desorption on branched silicon nanowires: applications in gas ionization detection

R. Banan-Sadeghian, M. Saif Islam

Proceedings Volume 7679, 76791D (2010) https://doi.org/10.1117/12.850281

KEYWORDS: Ionization, Silicon, Nitrogen, Helium, Molecules, Argon, Gold, Electrodes, Ions, Nanowires

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Proceedings Article | 29 April 2010 Paper

Purely sonochemical route for oriented zinc oxide nanowire growth on arbitrary substrate

Avinash Nayak, Aaron Katzenmeyer, Ja-Yeon Kim, Min Ki Kwon, Yasuhiro Gosho, M. Saif Islam

Proceedings Volume 7683, 768312 (2010) https://doi.org/10.1117/12.851755

KEYWORDS: Zinc oxide, Zinc, Ultrasonics, Silicon, Gold, Glasses, Chemical vapor deposition, Sputter deposition, Electronics, Nanowires

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Proceedings Article | 29 April 2010 Paper

Transfer of micro/nano-scale pillars and wires on conducting thermoplastic composite coated arbitrary substrates

Logeeswaran Jayaraman, Matthew Ombaba, Aaron Katzenmeyer, M. Saif Islam

Proceedings Volume 7683, 768313 (2010) https://doi.org/10.1117/12.851762

KEYWORDS: Polymers, Composites, Polymethylmethacrylate, Crystals, Silicon, Glasses, Electrodes, Solar cells, Metals, Photovoltaics

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Proceedings Article | 3 September 2009 Paper

Waveguide-integrated nanowire photoconductors on a non-single crystal surface

Sonia Grego, Kristin Gilchrist, Ja-Yeon Kim, Min-Ki Kwon, M. Saif Islam

Proceedings Volume 7406, 74060B (2009) https://doi.org/10.1117/12.825260

KEYWORDS: Waveguides, Silicon, Cladding, Photonic crystals, Crystals, Gold, Silica, Photoresistors, Photodetectors, Nanowires

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Proceedings Article | 21 August 2009 Paper

Single crystal semiconductor micropillar and nanowire on amorphous substrates for low cost solar hydrogen generation

V. J. Logeeswaran, Aaron Katzenmeyer, Min-Ki Kwon, Ja-Yeon Kim, M. Saif Islam

Proceedings Volume 7408, 74080U (2009) https://doi.org/10.1117/12.828744

KEYWORDS: Polymers, Crystals, Semiconductors, Polymethylmethacrylate, Solar energy, Silicon, Electrodes, Hydrogen, Metals, Nanowires

Read Abstract +

Proceedings Article | 12 May 2009 Paper

Heterogeneous 3D integration of multi-spectral photonic sensor with highly oriented micro/nano-pillars of semiconductors

V. Logeeswaran, Jacob Goodwin, Aaron Katzenmeyer, M. Saif Islam

Proceedings Volume 7318, 731805 (2009) https://doi.org/10.1117/12.821791

KEYWORDS: Polymers, Silicon, Polymethylmethacrylate, Semiconductors, Metals, Crystals, Glasses, Sensors, Electrodes, Etching

Read Abstract +

SPIE Journal Paper | 1 February 2008

Heteroepitaxial growth dynamics of InP nanowires on silicon

Ataur Sarkar, Ibrahim Kimukin, Christopher Edgar, Sung Soo Yi, M. Saif Islam

JNP, Vol. 2, Issue 01, 021775, (February 2008) https://doi.org/10.1117/12.10.1117/1.2839443

KEYWORDS: Silicon, Heterojunctions, Gold, Particles, Nanoparticles, Interfaces, Chemical species, Crystals, Chemical vapor deposition, Nanowires

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SPIE Journal Paper | 1 January 2008 Open Access

Guest Editorial: Nanophotonics for Communications

Shih-Yuan Wang, M. Saif Islam

JNP, Vol. 2, Issue 01, 021799, (January 2008) https://doi.org/10.1117/12.10.1117/1.2891295

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Proceedings Article | 12 October 2007 Paper

Photomodulation of metamaterial: an integrated approach

Logeeswaran Jayaraman, M. Saif Islam, Sagi Mathai, Mike Tan, Shih-Yuan Wang, R. Stanley Williams

Proceedings Volume 6772, 677208 (2007) https://doi.org/10.1117/12.738270

KEYWORDS: Glasses, Metamaterials, Modulation, Silicon, Copper, Phased array optics, Metals, Split ring resonators, Silica, Antennas

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Proceedings Article | 11 October 2007 Paper

Understanding the unusual conduction mechanism in InN nanowires

Anurag Chaudhry, M. Saif Islam

Proceedings Volume 6768, 67680F (2007) https://doi.org/10.1117/12.736577

KEYWORDS: Indium nitride, Resistance, Chemical species, Scattering, Nanostructures, Thin films, Semiconductors, Gallium nitride, Electronic components, Nanowires

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Proceedings Article | 11 October 2007 Paper

Growth kinetics of InP nanowires heteroepitaxially grown on a silicon surface

Ataur Sarkar, Ibrahim Kimukin, Christopher Edgar, Sung Soo Yi, Christoph Mitterbauer, Nigel Browning, M. Saif Islam

Proceedings Volume 6768, 676804 (2007) https://doi.org/10.1117/12.738469

KEYWORDS: Silicon, Heterojunctions, Gold, Crystals, Interfaces, Nanoparticles, Particles, Metalorganic chemical vapor deposition, Electronics, Nanowires

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Proceedings Article | 11 October 2007 Paper

Broadband image sensors for biomedical, security, and automotive applications

Achyut Dutta, Rabi Sengupta, Anupriya Krishnan, Saif Islam, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 6769, 67690C (2007) https://doi.org/10.1117/12.754495

KEYWORDS: Sensors, Photodetectors, Indium gallium arsenide, Absorption, Quantum efficiency, Image sensors, Mercury cadmium telluride, Silicon, Semiconducting wafers, Photodiodes

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Proceedings Article | 10 October 2007 Paper

Persistent photoconductivity of InP nanowire photoconductors bridged between amorphous silicon electrodes

Ataur Sarkar, Logeeswaran V. J., Nobuhiko Kobayashi, Joseph Straznicky, Shih-Yuan Wang, R. Stanley Williams, M. Saif Islam

Proceedings Volume 6768, 67680P (2007) https://doi.org/10.1117/12.752679

KEYWORDS: Electrodes, Silicon, Amorphous silicon, Heterojunctions, Light sources, Helium neon lasers, Interfaces, Photoresistors, Quantum wells, Nanowires

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Proceedings Article | 10 September 2007 Paper

Broadband detector for optical communication

Achyut Dutta, Rabi Sengupta, Anupriya Krishnan, Saif Islam, Nibir Dhar

Proceedings Volume 6775, 67750G (2007) https://doi.org/10.1117/12.754592

KEYWORDS: Photodetectors, Sensors, Absorption, Indium gallium arsenide, Optical communications, Quantum efficiency, Semiconducting wafers, Gallium, Ultraviolet radiation, Silicon

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Proceedings Article | 10 September 2007 Paper

Randomly oriented indium phosphide nanowires for optoelectronics

Nobuhiko Kobayashi, V. Logeeswaran, Xuema Li, M. Saif Islam, Joseph Straznicky, Shih-Yuan Wang, R. Stanley Williams

Proceedings Volume 6779, 67790E (2007) https://doi.org/10.1117/12.739398

KEYWORDS: Semiconductors, Quantum dots, Crystals, Photoresistors, Silicon, Epitaxy, Metals, Indium, Vapor phase epitaxy, Nanowires

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Proceedings Article | 10 September 2007 Paper

InP nanowire photodetectors heteroepitaxially grown between silicon electrodes

Ataur Sarkar, Anurag Chaudhry, V. Logeeswaran, Sungsoo Yi, M. Saif Islam

Proceedings Volume 6779, 67790K (2007) https://doi.org/10.1117/12.752513

KEYWORDS: Electrodes, Silicon, Bridges, Molecular bridges, Photodetectors, Gold, Chemical vapor deposition, Nanoparticles, Interfaces, Nanowires

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Proceedings Article | 18 October 2006 Paper

Toward the modulation of negative index materials by photoconductive coupling

Logeeswaran VJ, Alexander Stameroff, M. Islam, Wei Wu, Shih-Yuan Wang

Proceedings Volume 6373, 63730H (2006) https://doi.org/10.1117/12.688069

KEYWORDS: Magnetism, Modulation, Particles, Refractive index, Metamaterials, Plasma, Radio propagation, Electromagnetic radiation, Photoresistors, Split ring resonators

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Proceedings Article | 2 October 2006 Paper

Self-assembled microfabrication technology for 3D isotropic negative index material

V. Logeeswaran, M. Saif Islam, Mei-Lin Chan, David Horsley, Wei Wu, Shih-Yuan Wang

Proceedings Volume 6393, 639305 (2006) https://doi.org/10.1117/12.687140

KEYWORDS: Metals, Dielectrics, Silicon, Etching, Microfabrication, Low pressure chemical vapor deposition, Chromium, Particles, Split ring resonators, Metamaterials

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Proceedings Article | 17 November 2005 Paper

Novel multi-color image sensors for bio-chemical, bio-medical, and security applications

Achyut Dutta, Nibir Dhar, Priyalal Wijewarnasuriya, M. Saif Islam

Proceedings Volume 6008, 600812 (2005) https://doi.org/10.1117/12.634110

KEYWORDS: Sensors, Photodetectors, Absorption, Indium gallium arsenide, Image sensors, Quantum efficiency, Photodiodes, Mercury cadmium telluride, Silicon, Gallium

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Proceedings Article | 17 November 2005 Paper

Recent developments and current challenges in interfacing and integrating 1D semiconductor nanowires in devices and circuits

Christopher Edgar, M. Saif Islam

Proceedings Volume 6003, 60030P (2005) https://doi.org/10.1117/12.636014

KEYWORDS: Silicon, Metals, Gold, Oxides, Semiconductors, Etching, Semiconducting wafers, Germanium, Chemical species, Nanowires

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Proceedings Article | 25 October 2005 Paper

Novel broadband photodetector for optical communication

Achyut Dutta, M. Saif Islam

Proceedings Volume 6014, 60140C (2005) https://doi.org/10.1117/12.634119

KEYWORDS: Photodetectors, Sensors, Optical communications, Absorption, Indium gallium arsenide, Quantum efficiency, Gallium, Silicon, Ultraviolet radiation, Semiconducting wafers

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Proceedings Article | 25 October 2005 Paper

High speed pin photodetector with ultrawide spectral responses

C. Tam, C.-J. Chiang, M. Cao, M. Chen, M. Wong, A. Vazquez, J. Poon, K. Aihara, A. Chen, J. Frei, C. Johns, Ibrahim Kimukin, Achyut Dutta, M. Saif Islam

Proceedings Volume 6014, 60140Z (2005) https://doi.org/10.1117/12.630103

KEYWORDS: Indium gallium arsenide, Photodetectors, Absorption, Sensors, Silicon, Etching, Reflection, Antireflective coatings, Quantum efficiency, Resistance

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Proceedings Article | 24 June 2005 Paper

An adaptive edge preserving variational method for color image regularization

Zhu Lin, Andrzej Sluzek, MD. Saiful Islam

Proceedings Volume 5960, 59605Y (2005) https://doi.org/10.1117/12.633382

KEYWORDS: Signal to noise ratio, Diffusion, Interference (communication), Mathematical modeling, Visual process modeling, Image processing, Signal processing, Phase modulation, Data modeling, Machine vision

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Proceedings Article | 29 December 2004 Paper

Nano-bridging: a massively parallel self-assembly technique for interconnecting nanowire sensors

M. Saif Islam, Shashank Sharma, Theodore Kamins, R. Stanley Williams

Proceedings Volume 5593, (2004) https://doi.org/10.1117/12.569745

KEYWORDS: Silicon, Electrodes, Sensors, Oxides, Nanoparticles, Semiconducting wafers, Electronic components, Metals, Semiconductors, Nanowires

Read Abstract +

Enormous manufacturing cost and technical complexity of continued shrinking of electronic devices through the conventional transformative "top-down" approach have motivated efforts worldwide to explore simpler alternatives. New nano-scale assembly technology, such as catalyzed or self-assembled growth of nanowires and quantum dots, may enormously benefit integrated circuit fabrication technique methods. In the recent past, semiconductor nanowire devices have exhibited many novel electronic, optical and chemical properties. Despite a significant progress in nanowire synthesis and many promising single device demonstrations, nanowire applications have been hindered by our incapability to incorporate them within ICs. Several research groups have demonstrated an approach of serially connecting metal electrodes to individual nanowires using costly and slow e-beam lithography and made considerable investigations of the nanowire devices. However, none of those are massively parallel and manufacturable interfacing techniques that are crucial for reproducible fabrication of dense, low-cost nanodevices. In this paper, we present a novel bridging techniques that can connect a large number of highly directional metal-catalyzed nanowire devices between two pre-fabricated electrodes. Two opposing vertical and electrically isolated semiconductor surfaces are fabricated using coarse optical lithography along with wet and dry etching. Lateral nanowires are then grown from one surface and epitaxially connected to the other, forming mechanically robust "nano-bridges". By forming the structure on a silicon-on-insulator (SOI) substrate, the needed electrical isolation is achieved. The bridges are found to be mechanically robust and can resist significant force and chemical attacks. The technique, for the first time, can help access individual nanowire devices without using a nanoprobe or expensive lithography techniques. Using this novel bridging technique, novel nano-electronic and photonic devices can be designed and integrated with conventional circuits. The results will open doors to unprecedented device-density in integrated circuits, eventually making the nanowire based devices a commercial reality.

Proceedings Article | 14 August 2003 Paper

Recent advances and future prospects in high-speed and high-saturation-current photodetectors

M. Saif Islam, Ming Wu

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511278

KEYWORDS: Photodetectors, Photodiodes, Waveguides, Palladium, Receivers, RF photonics, Microwave radiation, Sensors, Diodes, Brain-machine interfaces

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Proceedings Article | 24 October 2000 Paper

Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot

A. H. M. Zahirul Alam, Mohammad Momen, Md. Islam, Pran Saha

Proceedings Volume 4228, (2000) https://doi.org/10.1117/12.405422

KEYWORDS: Field effect transistors, Stereolithography, Bismuth, Doping, Silicon, Oxides, Capacitance, Silicon films, Transistors, Interfaces

Read Abstract +

Proceedings Article | 24 October 2000 Paper

1.54-um erbium luminescence in silicon-germanium

Md. Huda, Md. Islam

Proceedings Volume 4227, (2000) https://doi.org/10.1117/12.405368

KEYWORDS: Erbium, Silicon, Luminescence, Electrons, Chemical species, Heterojunctions, Excitons, Quantum wells, Optoelectronics, Solids

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Proceedings Article | 12 November 1999 Paper

Distributed balanced photodetectors for high-performance rf photonic systems

Saiful Islam, Tai Chau, Ming Wu, Deborah Sivco, Alfred Cho

Proceedings Volume 3795, (1999) https://doi.org/10.1117/12.370170

KEYWORDS: Receivers, Photodiodes, Waveguides, Photodetectors, Signal detection, Signal to noise ratio, Microwave radiation, Sensors, Interference (communication), Capacitance

Read Abstract +

Proceedings Article | 9 November 1999 Paper

Mechanism for erbium luminescence in silicon at 1.54 um

Md. Huda, Saiful Siddiqui, Mohammed Islam, Md. Islam

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369416

KEYWORDS: Erbium, Luminescence, Chemical species, Electrons, Silicon, Erbium lasers, Active optics, Pulsed laser operation, Optoelectronics, Quantum efficiency

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Showing 5 of 73 publications

Proceedings Volume Editor (36)

SPIE Conference Volume | 8 October 2024

Low-Dimensional Materials and Devices 2024

SPIE Conference Volume | 13 October 2023

Low-Dimensional Materials and Devices 2023

SPIE Conference Volume | 3 October 2022

Low-Dimensional Materials and Devices 2022

SPIE Conference Volume | 23 August 2021

Low-Dimensional Materials and Devices 2021

SPIE Conference Volume | 4 September 2020

Low-Dimensional Materials and Devices 2020

Showing 5 of 36 publications

Conference Committee Involvement (73)

Low-Dimensional Materials and Devices 2025

3 August 2025 | San Diego, California, United States

Quantum Sensing and Nano Electronics and Photonics XXI

26 January 2025 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2024

19 August 2024 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XIV

22 April 2024 | National Harbor, Maryland, United States

Quantum Sensing and Nano Electronics and Photonics XX

28 January 2024 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2023

21 August 2023 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XIII

2 May 2023 | Orlando, Florida, United States

Quantum Sensing and Nano Electronics and Photonics XIX

29 January 2023 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2022

23 August 2022 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XII

5 April 2022 | Orlando, Florida, United States

Quantum Sensing and Nano Electronics and Photonics XVIII

24 January 2022 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2021

2 August 2021 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XI

12 April 2021 | Online Only, Florida, United States

Low-Dimensional Materials and Devices 2020

24 August 2020 | Online Only, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications X

27 April 2020 | Online Only, California, United States

Micro- and Nanotechnology Sensors, Systems, and Applications XII

27 April 2020 | Online Only, California, United States

Quantum Sensing and Nano Electronics and Photonics XVII

2 February 2020 | San Francisco, California, United States

Wide Bandgap Materials, Devices, and Applications IV

15 August 2019 | San Diego, California, United States

Low-Dimensional Materials and Devices 2019

11 August 2019 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications IX

15 April 2019 | Baltimore, MD, United States

Micro- and Nanotechnology Sensors, Systems, and Applications XI

14 April 2019 | Baltimore, MD, United States

Low-Dimensional Materials and Devices 2018

22 August 2018 | San Diego, California, United States

Wide Bandgap Power and Energy Devices and Applications III

21 August 2018 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VIII

15 April 2018 | Orlando, FL, United States

Micro- and Nanotechnology Sensors, Systems, and Applications X

15 April 2018 | Orlando, FL, United States

Low-Dimensional Materials and Devices 2017

9 August 2017 | San Diego, California, United States

Wide Bandgap Power Devices and Applications II

8 August 2017 | San Diego, California, United States

Micro- and Nanotechnology Sensors, Systems, and Applications IX

9 April 2017 | Anaheim, CA, United States

Low-Dimensional Materials and Devices 2016

30 August 2016 | San Diego, California, United States

Wide Bandgap Power Devices and Applications

29 August 2016 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VII

19 April 2016 | Baltimore, MD, United States

Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense

17 April 2016 | Baltimore, MD, United States

Micro- and Nanotechnology Sensors, Systems, and Applications VIII

17 April 2016 | Baltimore, MD, United States

Low-Dimensional Materials and Devices

12 August 2015 | San Diego, California, United States

Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

22 April 2015 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VI

21 April 2015 | Baltimore, MD, United States

Micro- and Nanotechnology Sensors, Systems, and Applications VII

20 April 2015 | Baltimore, MD, United States

Nanoepitaxy: Materials and Devices VI

19 August 2014 | San Diego, California, United States

Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense

5 May 2014 | Baltimore, MD, United States

Micro- and Nanotechnology Sensors, Systems, and Applications VI

5 May 2014 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications V

5 May 2014 | Baltimore, MD, United States

Nanoepitaxy: Materials and Devices V

25 August 2013 | San Diego, California, United States

Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense

29 April 2013 | Baltimore, Maryland, United States

Micro- and Nanotechnology Sensors, Systems, and Applications V

29 April 2013 | Baltimore, Maryland, United States

Energy Harvesting and Storage: Materials, Devices, and Applications IV

29 April 2013 | Baltimore, Maryland, United States

Nanoepitaxy: Materials and Devices IV

15 August 2012 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications III

23 April 2012 | Baltimore, Maryland, United States

Micro- and Nanotechnology Sensors, Systems, and Applications IV

23 April 2012 | Baltimore, Maryland, United States

Terahertz Physics, Devices, and Systems VI: Advance Applications in Industry and Defense

23 April 2012 | Baltimore, Maryland, United States

Nanoepitaxy: Materials and Devices III

24 August 2011 | San Diego, California, United States

Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense

25 April 2011 | Orlando, Florida, United States

Micro- and Nanotechnology Sensors, Systems, and Applications III

25 April 2011 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications II

25 April 2011 | Orlando, Florida, United States

Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II

1 August 2010 | San Diego, California, United States

Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense

5 April 2010 | Orlando, Florida, United States

Micro- and Nanotechnology Sensors, Systems, and Applications II

5 April 2010 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications

5 April 2010 | Orlando, Florida, United States

Nanoepitaxy: Homo and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials

3 August 2009 | San Diego, California, United States

Micro- and Nanotechnology Sensors, Systems, and Applications

15 April 2009 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense

14 April 2009 | Orlando, Florida, United States

Nanosensing: Materials, Devices, and Systems III

11 September 2007 | Boston, MA, United States

Terahertz Physics, Devices, and Systems II

11 September 2007 | Boston, MA, United States

Nanophotonics for Communication: Materials, Devices, and Systems IV

10 September 2007 | Boston, MA, United States

Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II

9 September 2007 | Boston, MA, United States

Photonic Materials, Devices, and Applications

2 May 2007 | Maspalomas, Gran Canaria, Spain

Advanced Optical and Quantum Memories and Computing IV

24 January 2007 | San Jose, California, United States

Nanophotonics for Communication: Materials, Devices, and Systems III

2 October 2006 | Boston, Massachusetts, United States

Terahertz Physics, Devices, and Systems

2 October 2006 | Boston, Massachusetts, United States

Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics

1 October 2006 | Boston, Massachusetts, United States

Photonic Crystals and Photonic Crystal Fibers for Sensing Applications

24 October 2005 | Boston, MA, United States

Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems

23 October 2005 | Boston, MA, United States

Nanosensing: Materials and Devices II

23 October 2005 | Boston, MA, United States

Nanosensing: Materials and Devices

25 October 2004 | Philadelphia, Pennsylvania, United States

Showing 5 of 73 Conference Committees

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