Source-mask co-optimization study for 7 nm metal layer patterns with 80 nm minimum pitch

Ying Li; Yanli Li; Qi Wang

doi:10.1117/12.3052968

10 December 2024 Source-mask co-optimization study for 7 nm metal layer patterns with 80 nm minimum pitch

Ying Li, Yanli Li, Qi Wang

Author Affiliations +

Proceedings Volume 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024); 134230W (2024) https://doi.org/10.1117/12.3052968
Event: 8th International Workshop on Advanced Patterning Solutions (IWAPS 2024), 2024, Jiaxing, Zhejiang, China

Abstract

Over the past decade, the semiconductor industry has rapid development, fueled by Moore's Law. Concurrently, semiconductor manufacturing has consistently progressed, one of the prominent manifestations is the continuous reduction in pattern sizes and pitches. To accommodate these smaller pattern sizes, innovative techniques for enhancing lithography resolution have emerged, like off-axis illumination, Optical Proximity Correction (OPC), Phase Shift Mask (PSM), Source-Mask Co-Optimization (SMO), and so on, among others, each contributing significantly to achieving noteworthy outcomes. SMO, specifically, stands out by optimizing critical process parameters like Exposure Latitude (EL), Depth of Focus (DoF), and Mask Error Factor (MEF) for patterns governed by specific design rules. It accomplishes this by formulating a Cost Function, which, through SMO can significantly widens the process window for these patterns, ensuring compliance with manufacturing specifications. In this report, we studied the 7 nm node Back-End-Of-the-Line (BEOL) Metal layer’s process. Based on the definition of the design rules, the typical minimum pitch for this layer is 80 nm. We will select this minimum pitch for the patterns and combine it with other representative and characteristic patterns at this node to investigate the enhancement of SMO on the patterns at this technology node.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ying Li, Yanli Li, and Qi Wang "Source-mask co-optimization study for 7 nm metal layer patterns with 80 nm minimum pitch", Proc. SPIE 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024), 134230W (10 December 2024); https://doi.org/10.1117/12.3052968

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KEYWORDS

Metals

Source mask optimization

Lithography

Design

Design rules

Manufacturing

Electroluminescence

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