Recent developments in the optical measurement of surface fields on silicon photoconductive power switches

Harshad P. Sardesai; William C. Nunnally; Paul Frazer Williams

doi:10.1117/12.636998

16 December 1992 Recent developments in the optical measurement of surface fields on silicon photoconductive power switches

Harshad P. Sardesai, William C. Nunnally, Paul Frazer Williams

Author Affiliations +

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636998
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

We report further investigations of the surface electric fields present between the contacts ofan optically controlled silicon switch. The Kerr electro-optic effect and a phase sensitive interferometric analyzer is used to measure the surface fields when a pulsed high voltage is applied across the contacts. The experimental arrangement has a temporal resolution of 100 nanoseconds and a spatial resolution of 50 microns. The experimental results show preferential field enhancement near the anode and the surface electric fields are nonuniform in space and time. The temporal non-uniformity is more pronounced at higher electric fields.

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Harshad P. Sardesai, William C. Nunnally, and Paul Frazer Williams "Recent developments in the optical measurement of surface fields on silicon photoconductive power switches", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636998

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