Paper
26 October 1994 Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application
Wen-Jie Qi, Wei-Feng Yu, Bing-Zong Li, Jing Liu, Fang Lu, Ming Zhang, Guo-Sheng Dong
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190804
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The nitrogen-rich silicon oxynitride thin film for gate insulator application has been studied in this work. The Plasma Enhanced Chemical Vapour Deposition (PECVD) process was carried out at 350 degree(s)C with a low power density (0.011 W/cm2). The Auger Electron Spectroscopy (AES) depth profiling and infrared absorption spectra show the film is composed of nitrogen-rich silicon oxynitride. MOS C-V measurements demonstrated that a pre-deposition plasma nitridation may result in a higher dielectric breakdown. The post- deposition densification can be used to remove the plasma induced damages, and the post-metallization annealing is effective in reducing the irradiation damage and obtaining a low interface state density.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Jie Qi, Wei-Feng Yu, Bing-Zong Li, Jing Liu, Fang Lu, Ming Zhang, and Guo-Sheng Dong "Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190804
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KEYWORDS
Plasma enhanced chemical vapor deposition

Plasma

Silicon

Interfaces

Annealing

Silicon films

Thin films

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