Paper
10 April 2001 Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: determination and analysis
Dmitry G. Revin, Vladimir Ya. Aleshkin, A. V. Antonov, Vladimir G. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, B. N. Zvonkov, E. A. Uskova
Author Affiliations +
Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425478
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Lateral electric field (up to 2 kV/cm) effects on light transmittance near the fundamental edge absorption in selectively doped p-type In0.21Ga0.79As/GaAs heterostructure with Zn delta-doped barriers have been investigated. The hole distribution function modulations were calculated using the light transmittance modulation data. Fluctuations of the quantum well parameters were taken into account.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry G. Revin, Vladimir Ya. Aleshkin, A. V. Antonov, Vladimir G. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, B. N. Zvonkov, and E. A. Uskova "Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: determination and analysis", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425478
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KEYWORDS
Modulation

Quantum wells

Transmittance

Absorption

Heterojunctions

Optical testing

Semiconductors

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