Evaluation of EA-PSM opaque repair on 90-nm lithography

Dae-Woo Kim; Jung-Kwan Lee; Sang-Hoi Koo; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi

doi:10.1117/12.504210

28 August 2003 Evaluation of EA-PSM opaque repair on 90-nm lithography

Dae-Woo Kim, Jung-Kwan Lee, Sang-Hoi Koo, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504210
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

Increasing complexity, smaller design rule and development of PSM (Phase Shift Mask) are required more precise photomask repair technology. Recently, It is important unit process to enhance yield, production time and delivery in 130nm node below mass production. Furthermore, opaque defects are on the increase compare to clear defects using dry process. Therefore key issue of advanced repair technology is opaque defects removal and edge placement accuracy control. In this paper, we will discuss opaque repair technology of 90nm node EA-PSM to get improved edge placement using FIB (Focused Ion Beam) machine. Firstly, we started with a concept of low ion beam current at 30keV acceleration voltage. To optimize image quality in low beam current, we have changed suitable scan parameters in target FOV (Field Of View) and checked scan damage in these parameters with AIMS. Secondly, we have applied a reregistration function to enhance edge placement control and analyzed edge placement variation by CD-SEM and AIMS tool after pattern drift. Thirdly, transmission of repaired region was confirmed with AIMS and inspection tool.

Citation Download Citation

Dae-Woo Kim, Jung-Kwan Lee, Sang-Hoi Koo, Dong-Heok Lee, Jin-Min Kim, and Sang-Soo Choi "Evaluation of EA-PSM opaque repair on 90-nm lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504210

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