Paper
26 June 1986 Pulsed Laser Processing Of Silicon Via Absorption By Free Carriers
R. B. James
Author Affiliations +
Abstract
Using transmission electron microscopy, we show that melting and subsequent defect-free recrystallization can be obtained in silicon by absorbing the pulse energy via free-carrier transitions. We use a pulsed CO2 laser to anneal extended lattice defects caused by high-temperature diffusion of phosphorus into lightly doped silicon. For pulse energy densities exceeding a threshold value, we find that the spherical precipitates and dislocation loops in the diffused layer are dissolved by C02 laser-induced melting, which results in a large increase in the electrically active phosphorus in the near-surface region. We also used the differential absorption between layers with different free-carrier concentrations to achieve melting of a buried ion-implanted layer, without melting the material that encapsulates the molten layer. This type of melting phenomenon is likely not obtainable using a laser where the absorption is dominated by an intrinsic mechanism. New applications using free-carrier absorption as a means to process silicon samples are discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. B. James "Pulsed Laser Processing Of Silicon Via Absorption By Free Carriers", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961201
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KEYWORDS
Absorption

Silicon

Semiconductor lasers

Transmission electron microscopy

Laser processing

Carbon dioxide lasers

Phosphorus

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