Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays

Michael M. Crouse; Thomas L. James; David Crouse

doi:10.1117/12.795399

26 August 2008 Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays

Michael M. Crouse, Thomas L. James, David Crouse

Author Affiliations +

Proceedings Volume 7095, Nanophotonics and Macrophotonics for Space Environments II; 70950J (2008) https://doi.org/10.1117/12.795399
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

The fragile nature of alumina and the intrinsic Al2O3 barrier layer at the pore bases has hindered its use in optoelectronic devices. In this work, these issues have been addressed by the development of a nanoporous alumina template directly on a silicon substrate with platinum electrodes at the pore bases. This template was then used to perform dc galvanostatic electrochemical deposition of II-VI semiconductor heterostructure nanowires that were then used to fabricate pixilated detector arrays.

Citation Download Citation

Michael M. Crouse, Thomas L. James, and David Crouse "Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays", Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 70950J (26 August 2008); https://doi.org/10.1117/12.795399

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