Paper
1 December 2008 What is the strongest candidate in lithography for 2x nm HP and beyond?
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 71400A (2008) https://doi.org/10.1117/12.810264
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
We have investigated three candidate lithography technologies for 2x nm HP generation and beyond for the application to LSI, namely, double patterning technology (DPT), EUV lithography (EUVL) and nanoimprint lithography (NIL). In terms of lithography unit technologies and lithography integration technologies, each technology has advantages and disadvantages from the viewpoint of difficulty, development resources, extendability, process cost, and so on. Using a development matrix consisting of development steps and development stages, we clarified the current development status for each technology. This matrix indicates the items for which technological critical breakthroughs are necessary to realize LSI production. From this study, we made three lithography development scenarios for the feasibility stage and the production stage for 2x nm HP generation and beyond.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohji Hashimoto, Ikuo Yoneda, Takeshi Koshiba, Shinji Mikami, Takumi Ota, Masamitsu Ito, Tetsuro Nakasugi, and Tatsuhiko Higashiki "What is the strongest candidate in lithography for 2x nm HP and beyond?", Proc. SPIE 7140, Lithography Asia 2008, 71400A (1 December 2008); https://doi.org/10.1117/12.810264
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Cited by 3 scholarly publications.
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KEYWORDS
Lithography

Extreme ultraviolet lithography

Nanoimprint lithography

Critical dimension metrology

Photoresist processing

Double patterning technology

Photomasks

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