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We present low threshold quantum cascade surface emitting lasers (QCSELs) emitting at wavelengths of 4.5 micrometers or 8 micrometers. To extract the light vertically from the InP-based buried heterostructure laser a second order InGaAs/InP grating is used. Both ridge facets are formed by dry-etching followed by coating a dielectric-metal film. Due to the high reflectivity of the facets, the cavity can be shortened well below 500 micrometers reducing the threshold power to several hundred milliwatts. The proposed device concept allows large-scale fabrication and wafer-level characterization. The results are an important step towards low-cost and low-power consuming quantum cascade lasers for portable MIR gas sensors.
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