In this presentation, we delve into hBN’s potential as a host for photon emitters. In our recent publication, we introduced a method for creating defects in hBN with tailored spectral properties and spatial distributions using ion beam irradiation. We demonstrate that gallium ions efficiently produce emitters, with Raman spectroscopy identifying defect vibrational signatures. Spectral tuning over 200 nm is achieved through thermal annealing, regardless of ion species, energy, or density. This process is confirmed by Raman spectroscopy, indicating changes in defects' configurations. Coupling a focused ion beam system with annealing, we achieve precise control over emitters' spectral and spatial properties, advancing quantum technologies by enabling customization of emitter properties in hBN.
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