Paper
20 March 2008 Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning
Yasushi Nishiyama, Toshihisa Anazawa, Hiroaki Oizumi, Iwao Nishiyama, Osamu Suga, Kazuki Abe, Satoru Kagata, Akira Izumi
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Abstract
The deposition characteristics of carbon film on EUV mask surface, the impact of carbon deposition on lithography performance, and cleaning of deposited carbon film on EUV mask are studied. The density of the carbon film was found to be nearly half of that of graphite by X-ray reflectivity measurement. The impact of carbon deposition on the lithography performance was simulated by SOLID-EUV. The CD variation by carbon deposition on the mask depends on the deposition profile on the absorber pattern. Intentionally created contaminated masks were treated by a cleaning process using atomic hydrogen. The cleaning efficiency and durability of film materials are discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasushi Nishiyama, Toshihisa Anazawa, Hiroaki Oizumi, Iwao Nishiyama, Osamu Suga, Kazuki Abe, Satoru Kagata, and Akira Izumi "Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692116 (20 March 2008); https://doi.org/10.1117/12.771978
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Cited by 19 scholarly publications and 1 patent.
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KEYWORDS
Carbon

Reflectivity

Photomasks

Multilayers

Extreme ultraviolet

Contamination

Lithography

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