High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P light-emitting diodes

Mari Ochiai-Holcomb; Michael R. Krames; Gloria E. Hofler; Carrie Carter-Coman; Eugene I. Chen; Patrick N. Grillot; Kwang Park; Nathan F. Gardner; Jen-Wu Huang; Jason Posselt; David Collins; Steve A. Stockman; M. George Craford; Frederick A. Kish; I. Hsing Tan; Tun S. Tan; Christophe P. Kocot; Mark Hueschen

doi:10.1117/12.382843

17 April 2000 High-power truncated-inverted-pyramid (Al_xGa_1-x)_0.5In_0.5P light-emitting diodes

Mari Ochiai-Holcomb, Michael R. Krames, Gloria E. Hofler, Carrie Carter-Coman, Eugene I. Chen, Patrick N. Grillot, Kwang Park, Nathan F. Gardner, Jen-Wu Huang, Jason Posselt, David Collins, Steve A. Stockman, M. George Craford, Frederick A. Kish, I. Hsing Tan, Tun S. Tan, Christophe P. Kocot, Mark Hueschen

Author Affiliations +

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382843
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

High power light emitting diodes (LEDs) are of interest for many lighting applications. Flux improvements can be achieved by scaling conventional chips to larger dimensions. However this scaling results in a decrease in extraction efficiency. These penalties can be offset by modifying the chip geometry such that the number of internal reflections is reduced, thereby increasing the probability of photon escape. LEDs with a truncated-inverted-pyramid (TIP) geometry have been fabricated and packaged. Peak efficiencies exceeding 100 lm/W have been measured (100 mA dc, 300 K) for orange ((lambda) _p approximately 610 m) devices. In the red wavelength regime ((lambda) _p approximately 650 nm), peak external quantum efficiencies of 55% (100 mA dc, 300 K) have been achieved. Flux exceeding 65 lumens from a single 594 nm device has also been demonstrated. These characteristics match and/or exceed the performance of many conventional lighting sources.

Citation Download Citation

Mari Ochiai-Holcomb, Michael R. Krames, Gloria E. Hofler, Carrie Carter-Coman, Eugene I. Chen, Patrick N. Grillot, Kwang Park, Nathan F. Gardner, Jen-Wu Huang, Jason Posselt, David Collins, Steve A. Stockman, M. George Craford, Frederick A. Kish, I. Hsing Tan, Tun S. Tan, Christophe P. Kocot, and Mark Hueschen "High-power truncated-inverted-pyramid (Al_xGa_1-x)_0.5In_0.5P light-emitting diodes", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382843

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available