SERS has become a highly preferred method with the effect of advances in instrument technology and potential for application to many areas from medicine to art conservation for the detection of trace-level environmental and biological analytes. However, the effects of substrate variation and the details of the enhancement mechanism still of concern even much progress has been achieved in recent years. Therefore, it is important to control the size and shape of the materials for maximize the enhancement factor and ensure the reproducibility of the substrates by considering SERS uncertainty principle. In this study, we present novel SERS substrate preparation methods that are highly promising in terms of both signal enhancement and reproducibility with high benefit-cost ratio.
In this work, we report the feasibility of the silver nanowire (AgNW) foils as highly-sensitive, reproducible and facile detection tools for surface-enhanced Raman spectroscopy (SERS) applications. These flexible and free-standing AgNW foils, fabricated by vacuum filtration method following a modified polyol synthesis of AgNWs, are adequately structured for both biological specimen filtering and trace amount of molecule detection simultaneously. The compatibility of AgNW foil in SERS is investigated by using a Raman active molecule of different steric volumes across the filter cross-section. We have shown that AgNW foils exhibit extremely strong SERS activity with detection limit up to 10-9 M of crystal violet (CV) molecule with 20% variation over ~cm2, revealing reliable homogeneity of the acquired signal. While naturally occurring polyvinylpyrrolidone (PVP) layer during polyol synthesis contribute to controlled aggregation, oxidation prevention, and size - shape control purposes, it also creates a major challenge for obtaining enormous enhancement factors. However, controlled thickness of aluminum oxide (Al2O3) coating on PVP@AgNW foils affords to achieve higher enhancement factors than the uncoated ones. What is interesting is that the maximum intensity is achieved from two cycles of Al2O3 deposited on AgNW foils. This is attributed to the two different origins: first, a higher adsorption affinity of CV molecules to Al2O3 layer than PVP layer; second, tunneling barrier formation against quantum tunneling effects.
In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15μm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55μm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation and recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10°C – 60°C ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.
In this work, the electron-carrier-selectivity of ALD deposited TiO2 contact on n-type and p-type c-Si wafers is presented. The optical, compositional, and diode quality dependence of TiO2 on the ALD deposition temperature were analyzed using spectroscopic ellipsometry, AFM, XPS, GI-XRD, and CV measurements. By optimizing the ALD process parameters, an impressive effective minority carrier lifetime of up to 2.3 milliseconds corresponding to an iVoc of ~700 mV was obtained from wet chemical oxide-SiO2/TiO2 passivation stack layers. Finally, the asymmetry in C-V and J-V measurements betweenTiO2/n-type and TiO2/p-type c-Si heterojunctions was examined and the electron transport selectivity of TiO2 was revealed.
Range performance of an imaging system is a key factor for an infrared search and tracking system with a purpose of detection, recognition and identification. Therefore, the prediction of the expected range performance is of utmost importance. The range prediction includes many variables that affect the outcome. Wavelength is one of the most important parameters because it has an enormous effect on range, but detector technology directly related to range performance. In this study, MWIR and LWIR imaging systems in certain configurations are modelled and analyzed in terms of range. The imaging system is modelled taking into account the properties of the detector and the optics, while the atmospheric conditions is modelled using MODTRAN. Analytical expressions for detection, recognition and identification ranges with respect to Johnson criteria for different target types are derived. The effects of the given parameters to the range performance are examined and a comparison between the different wavelengths is discussed.
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.
Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.
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