Magnesium oxide (MgO) is a promising dielectric for use with GaN due its similar crystal structure and lattice constant, large bandgap, and high dielectric constant. We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via the atomic layer deposition (ALD) technique. Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are presented. I-V and C-V measurements of MgO/GaN metal-oxide-semiconductor capacitance structures are also presented.
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