In this paper, the tunable narrow spectral semiconductor laser technology based on on-chip DBR gratings is investigated. The surface DBR grating structure and electro-thermal tuning structure were designed, determined key parameters of grating structural, and the problem of multi-peak suppression was studied. Developed manufacturing technology for surface DBR gratings and tunable technology based on micro-electrode heaters and applied them to tapered MOPA laser chips, achieving output laser spectral locking while maintaining the high brightness of tapered semiconductor lasers. The tapered MOPA laser has achieved a narrow spectral width of 40 pm and a side mode suppression ratio of 35 dB under a continuous-wave power of 10.3 W. At a microelectrode heater current of 0.22 A, the wavelength can be continuously tuned over a range of 4.3 nm, with a maximum spectral width not exceeding 60 pm.
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