Dr. Daniel Tomaszewski Profile

Dr. Daniel Tomaszewski

at Łukasiewicz - IMiF

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 22 December 2016 Paper

Paper

Bipolar transistor in VESTIC technology: prototype

Piotr Mierzwiński, Wiesław Kuźmicz, Krzysztof Domański, Daniel Tomaszewski, Grzegorz Głuszko

Proceedings Volume 10175, 101750E (2016) https://doi.org/10.1117/12.2260787

KEYWORDS: Transistors, Prototyping, Manufacturing, CMOS technology, Semiconducting wafers, Matrices, Microelectronics, Optoelectronics, Semiconductors, Oxides

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Proceedings Article | 22 December 2016 Paper

Paper

A test structure for investigation of junctionless FETs as THz radiation sensors

Michał Zaborowski, Daniel Tomaszewski, Jacek Marczewski

Proceedings Volume 10175, 1017512 (2016) https://doi.org/10.1117/12.2258599

KEYWORDS: Terahertz radiation, Sensors, Field effect transistors, Transistors, Antennas, Capacitance, Electrodes, Resistance, Silicon, Semiconducting wafers

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Proceedings Article | 19 August 2014 Paper

Paper

Thermal energy harvesters with piezoelectric or electrostatic transducer

Piotr Prokaryn, Krzysztof Domański, Michał Marchewka, Daniel Tomaszewski, Piotr Grabiec, Onoriu Puscasu, Stéphane Monfray, Thomas Skotnicki

Proceedings Volume 9291, 92910E (2014) https://doi.org/10.1117/12.2070512

KEYWORDS: Capacitors, Transducers, Electrodes, Aluminum, Silicon, Data acquisition, Polymethylmethacrylate, Silica, Capacitance, Diodes

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Proceedings Article | 25 July 2013 Paper

Paper

On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes

Grzegorz Głuszko, Daniel Tomaszewski, Jolanta Malesińska, Krzysztof Kucharski

Proceedings Volume 8902, 89020K (2013) https://doi.org/10.1117/12.2031057

KEYWORDS: Resistors, Semiconducting wafers, Resistance, Manufacturing, Transistors, Molybdenum, Silicon, CMOS technology, Aluminum, Capacitance

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Proceedings Article | 25 July 2013 Paper

Paper

Adjustment of sensivity of ISFET-type micro- and nanosensors

Michał Zaborowski, Daniel Tomaszewski, Piotr Grabiec

Proceedings Volume 8902, 89021U (2013) https://doi.org/10.1117/12.2030890

KEYWORDS: Sensors, Field effect transistors, HF etching, Nanosensors, Silicon, Etching, Microsensors, Dielectrics, Oxygen, Electrodes

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