Prof. David J. Rogers Profile

Prof. David J. Rogers

Director at Nanovation

SPIE Involvement:

Conference Chair | Editor | Author | Prism Awards Judge | Startup Challenge Judge

Area of Expertise:

Oxide Semiconductors , Thin Film Growth , Materials Characterisation , High Tech Start-ups , Optics & Photonics , Nanomaterials

Websites:

Company Website

Profile Summary

David Rogers received his PhD in Physics from Glasgow University in 1990. His early career was at Philips Research Laboratories (Netherlands), Carnegie Mellon University (USA) and Nippon Telephone & Telegraph (Japan). In 2001 he co-founded Nanovation, which is a fab for innovative oxide semiconductors. Dr. Rogers is the author/co-author of over 30 patents & over 150 publications. He is also an organiser & a regular invited speaker at numerous international conferences. In parallel with developing Nanovation, Dr. Rogers has actively pursued an academic career and he is currently an adjunct Professor in the School of Mathematical and Physical Sciences at the University of Technology of Sydney.

Publications (43)

Proceedings Article | 18 March 2024 Paper

Paper

Comparison of PLD-grown p-NiO/n-Ga2O3 heterojunctions on bulk single crystal β-Ga2O3 and r-plane sapphire substrates

D. Rogers, V. Sandana, F. Hosseini Teherani, M. Razeghi

Proceedings Volume 12887, 128870J (2024) https://doi.org/10.1117/12.3012511

KEYWORDS: Gallium, Heterojunctions, Light sources and illumination, Lamps, Xenon, Optical transmission, Nickel, Camera shutters, Absorption, Pulsed laser deposition

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Proceedings Article | 15 March 2024 Paper

Paper

Use of yttria-stabilised zirconia substrates for zinc oxide mediated epitaxial lift-off of superior yttria-stabilised zirconia thin films

D. Rogers, T. Maroutian, V. Sandana, P. Lecoeur, F. Teherani, P. Bove, M. Razeghi

Proceedings Volume 12887, 128870P (2024) https://doi.org/10.1117/12.3023431

KEYWORDS: Zinc oxide, Epitaxial lateral overgrowth, Atomic force microscopy, Zirconium dioxide, Crystals, Thin films, Yttrium, Photography, Optical microscopes, Silicon photonics

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Proceedings Article | 16 March 2023 Presentation + Paper

Presentation + Paper

Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness

Luc Damé, Lucile Conan, Carlo De Santi, Alessandro Caria, Matteo Buffolo, Matteo Meneghini, Pierre Maso, Clément Dias, Halima Ghorbel, Mustapha Meftah, Philippe Bove, V. Sandana, David Rogers, Ferechteh Teherani

Proceedings Volume 12422, 1242207 (2023) https://doi.org/10.1117/12.2651204

KEYWORDS: Spectral response, Photodetectors, Dark current, Packaging, Gallium oxide, Epitaxy, Vacuum, Oxides, Optical lithography, Gallium

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Proceedings Article | 5 March 2022 Presentation

Presentation

Performances and calibrations of new disruptive UVC β-Ga2O3 sensors for new space applications

Luc Damé, Halima Ghorbel, Mustapha Meftah, Xavier Arrateig, Pierre Gilbert, Pierre Maso, David Bolsée, Nuno Pereira, David Rogers, Philippe Bove, Vinod Sandana, Ferechteh Teherani

Proceedings Volume PC12002, PC120020F (2022) https://doi.org/10.1117/12.2610749

KEYWORDS: Sensors, Ultraviolet radiation, Calibration, Climatology, Space sensors, Ozone, Visible radiation, Stratosphere, Photodetectors, Oxides

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Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

Effect of high-energy electron irradiation on the electronic properties of beta-gallium oxide

Thi-Huong Dang, Marcin Konczykowski, Viatcheslav Safarov, Elie Hammou, Lucia Romero Vega, Nadège Ollier, Romain Grasset, Antonino Alessi, Henri-Jean Drouhin, Henri Jaffrès, Valery Yu. Davydov, Agnieszka Wołoś, David Rogers, Vinod Sandana, Philippe Bove, Féréchteh Teherani

Proceedings Volume 12002, 1200207 (2022) https://doi.org/10.1117/12.2622559

KEYWORDS: Gallium, Luminescence, Ions, Crystals, Semiconductors, Temperature metrology, Oxides, Annealing, Chromium, Ultraviolet radiation

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Proceedings Article | 13 September 2021 Poster + Paper

Poster + Paper

Use of sacrificial zinc oxide template layers for epitaxial lift-off of yttria-stabilised zirconia thin films

D. Rogers, T. Maroutian, V. Sandana, P. Lecoeur, F. Teherani, P. Bove, M. Razeghi

Proceedings Volume 11687, 116872C (2021) https://doi.org/10.1117/12.2591843

KEYWORDS: Zinc oxide, Epitaxial lateral overgrowth, Crystals, Silicon photonics, Atomic force microscopy, Zirconium dioxide, Sapphire, Photography, Silicon, Optical microscopes

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Proceedings Article | 12 September 2021 Presentation + Paper

Presentation + Paper

Development and simulated environment testing of β-(Al)Ga2O3-based photodetectors for space-based observation of the Herzberg continuum

X. Arrateig, D. Rogers, P. Maso, F. Bouyssou, I. Sidi-Boumeddine, W. El-Huni, H. Bouhnane, Y. Sama, P. Bove, S. Le Gall, A. Brezart-Oudot, H. Ghorbel, P. Gilbert, V. Sandana, F. Teherani, S. Gautier, A. Darga, Z. Djebbour, A. Ougazzaden

Proceedings Volume 11858, 1185813 (2021) https://doi.org/10.1117/12.2603565

KEYWORDS: Photodetectors, Sensors, Semiconducting wafers, Ultraviolet radiation, Nitrogen, Temperature metrology, Prototyping, Packaging, Climatology, Zinc oxide

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With the advent of “New Space” and the explosion of nanosatellite missions, an extended latitude is offered for the emergence of innovative technological devices such as novel compact solid state UVC sensors. In this context, β-Ga₂O₃-based photodetectors are emerging as very promising candidates to overcome current technological limits for UVC detection in Space. Indeed, monitoring UVC solar radiation, and more specifically the Herzberg continuum (200-242nm), is fundamental to understand its’ impact on the earth’s climate and build better chemistry-climate models [1]. It is also, however, extremely challenging to achieve due to the harsh operating environment including large thermal variations, high energy particles, ionizing radiation and filter contamination due to satellite outgassing. The Ultra Wide Band Gap semiconductor, β-Ga₂O₃ (Eg ~ 4.9eV at 253nm), is intrinsically solar blind, radiation-hard and thermally-robust. Furthermore, the authors have recently shown that the bandgap can be engineered upwards through Al alloying so as to obtain optical transitions from 253 down to 200nm [2,3]. This allows the realization of β-Ga₂O₃-based photodetectors with peak operating wavelengths which capture the Herzberg continuum selectively and thus, dispenses with the need for short pass filters. Therefore, these β-Ga₂O₃-based photodetectors are excellent candidates to monitor the Herzberg continuum from Space. Hence, they have been selected to be integrated on the INSPIRE-Sat 7 (International Satellite Program in Research and Education) nanosatellite (“2U” CubeSat) which will monitor the Herzberg continuum on a low Earth orbit, following a prototype mission UVSQ-Sat (INSPIRE-Sat 5) successfully launched in January 2021 [4]. This work presents the realization of β-Ga₂O₃-based photodetectors going from the wafer to the final packaged sensors including device architecture development, photolithography, contacting, probing, singulation, packaging, stringent robustness testing (in a simulated environment) and performance binning, so as to obtain the final flight model photodetectors.

Proceedings Article | 3 August 2021 Presentation

Presentation

Materials and applications perspectives for Ga2O3

David Rogers, Ferechteh Teherani, Philippe Bove, Eric Sandana

Proceedings Volume 11801, 1180109 (2021) https://doi.org/10.1117/12.2601744

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Proceedings Article | 16 April 2021 Presentation + Paper

Presentation + Paper

A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials

A. Pérez-Tomás, E. Chikoizde, D. Rogers

Proceedings Volume 11687, 116871Y (2021) https://doi.org/10.1117/12.2590747

KEYWORDS: Oxides, Optoelectronics, Electronics, Internet, Graphene, Flexible circuits, Dielectrics, Deep ultraviolet, Carbon, Brain

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Proceedings Article | 24 March 2021 Poster + Paper

Poster + Paper

Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition

D. Rogers, A. Courtois, F. Teherani, V. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi

Proceedings Volume 11687, 116872D (2021) https://doi.org/10.1117/12.2596194

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Proceedings Article | 5 March 2021 Presentation

Presentation

Luminescence properties of beta-Ga2O3

Cuong Ton-That, Thanh Tung Huynh, Ekaterine Chikoidze, Curtis Irvine, Muhammad Zakria, Yves Dumont, Ferechteh Teherani, Eric Sandana, Philippe Bove, David Rogers, Matthew Phillips

Proceedings Volume 11687, 116870A (2021) https://doi.org/10.1117/12.2585041

KEYWORDS: Luminescence, Ultraviolet radiation, Thin films, Hydrogen, Crystals, X-rays, Thin film growth, Sapphire, Pulsed laser deposition, Plasma

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Proceedings Article | 12 March 2019 Paper

Paper

p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. Sandana, D. Rogers, F. Teherani, P. Bove, R. McClintock, M. Razeghi

Proceedings Volume 10919, 109191H (2019) https://doi.org/10.1117/12.2520124

KEYWORDS: Silicon, Field effect transistors, Nickel, Pulsed laser deposition, Thin films, Oxides, Transistors, Lithium, Ocean optics, Transmittance

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Proceedings Article | 27 March 2018 Paper

Paper

Sensing based on surface-enhanced Raman scattering using self-forming ZnO nanoarrays coated with gold as substrates

Feng Tang, Pierre-Michel Adam, David Rogers, Vinod Sandana, Philippe Bove, Ferechteh Teherani

Proceedings Volume 10533, 105331F (2018) https://doi.org/10.1117/12.2302741

KEYWORDS: Zinc oxide, Raman spectroscopy, Gold, Silicon, Molecules, Surface enhanced Raman spectroscopy, Thin films, Glasses, Thin film coatings, Raman scattering

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Proceedings Article | 22 March 2018 Paper

Paper

The new oxide paradigm for solid state ultraviolet photodetectors

D. Rogers, P. Bove, X. Arrateig, V. Sandana, F. Teherani, M. Razeghi, R. McClintock, E. Frisch, S. Harel

Proceedings Volume 10533, 105331P (2018) https://doi.org/10.1117/12.2319505

KEYWORDS: Gallium, Ultraviolet radiation, Magnesium, Transmittance, Zinc oxide, Oxides, Photodetectors, Silicon carbide, Palladium, Aluminum

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Proceedings Article | 14 March 2018 Paper

Paper

A review of the growth, doping, and applications of Beta-Ga2O3 thin films

Manijeh Razeghi, Ji-Hyeon Park, Ryan McClintock, Dimitris Pavlidis, Ferechteh Teherani, David Rogers, Brenden Magill, Giti Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak Dravid

Proceedings Volume 10533, 105330R (2018) https://doi.org/10.1117/12.2302471

KEYWORDS: Thin films, Gallium, Doping, Silicon, Field effect transistors, Thin film growth, Tin, Sapphire, Metalorganic chemical vapor deposition, Aluminum

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Proceedings Article | 6 March 2018 Paper

Paper

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Amador Pérez-Tomás, Ekaterine Chikoidze, Michael Jennings, Stephen A. Russell, Ferechteh Teherani, Philippe Bove, Eric Sandana, David Rogers

Proceedings Volume 10533, 105331Q (2018) https://doi.org/10.1117/12.2302576

KEYWORDS: Oxides, Photovoltaics, Solar cells, Semiconductors, Gallium, Electronics, Silicon, Silicon carbide, Transistors, Gallium nitride

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Proceedings Article | 3 April 2017 Paper

Paper

Lithium-doped nickel oxide for p-type dye-sensitized solar cell applications

Vinod Sandana, David Rogers, Ferechteh Teherani, Philippe Bove, Ryan McClintock, Manijeh Razeghi

Proceedings Volume 10105, 101052C (2017) https://doi.org/10.1117/12.2263713

KEYWORDS: Nickel, Oxides, Dye sensitized solar cells, Zinc oxide, Scanning electron microscopy, Wet etching, Nanostructuring, Sapphire, Glasses, Silicon, Gold

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Proceedings Article | 23 March 2017 Paper

Paper

Investigations on the substrate dependence of the properties in nominally-undoped beta-Ga2O3 thin films grown by PLD

F. Teherani, D. Rogers, V. Sandana, P. Bove, C. Ton-That, L. L. C. Lem, E. Chikoidze, M. Neumann-Spallart, Y. Dumont, T. Huynh, M. Phillips, P. Chapon, R. McClintock, M. Razeghi

Proceedings Volume 10105, 101051R (2017) https://doi.org/10.1117/12.2262757

KEYWORDS: Sapphire, Gallium, Thin films, Crystals, Aluminum, Transmittance, Silicon, Ocean optics, Thin film growth, Chlorine

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Proceedings Article | 7 March 2017 Presentation + Paper

Presentation + Paper

Identification of acoustic waves in ZnO materials by Brillouin light scattering for SAW device applications

M. Zerdali, F. Bechiri, S. Hamzaoui, F. Teherani, D. Rogers, V. Sandana, P. Bove, P. Djemia, Y. Roussigné

Proceedings Volume 10105, 1010514 (2017) https://doi.org/10.1117/12.2254783

KEYWORDS: Zinc oxide, Acoustics, Light scattering, Thin films, Scattering, Crystals, Phonons, Solids, Silicon, Wave propagation

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Proceedings Article | 5 October 2015 Presentation

Presentation

Enhanced luminescence excitation via efficient optical energy transfer (Presentation Recording)

Roy Aad, Komla Nomenyo, Bogdan Bercu, Christophe Couteau, Vincent Sallet, David Rogers, Michael Molinari, Gilles Lérondel

Proceedings Volume 9545, 95450J (2015) https://doi.org/10.1117/12.2190818

KEYWORDS: Luminescence, Energy transfer, Light sources and illumination, Quantum dots, Waveguides, Polymer thin films, Polymers, Nanostructuring, Internal quantum efficiency, Absorption

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Luminescent nanoscale materials (LNMs) have received widespread interest in sensing and lighting applications due to their enhanced emissive properties. For sensing applications, LNMs offer improved sensitivity and fast response time which allow for lower limits of detection. Meanwhile, for lighting applications, LNMs, such as quantum dots, offer an improved internal quantum efficiency and controlled color rendering which allow for better lighting performances. Nevertheless, due to their nanometric dimensions, nanoscale materials suffer from extremely weak luminescence excitation (i.e. optical absorption) limiting their luminescence intensity, which in turn results in a downgrade in the limits of detection and external quantum efficiencies. Therefore, enhancing the luminescence excitation is a major issue for sensing and lighting applications. In this work, we report on a novel photonic approach to increase the luminescence excitation of nanoscale materials. Efficient luminescence excitation increase is achieved via a gain-assisted waveguided energy transfer (G-WET). The G-WET concept consists on placing nanoscale materials atop of a waveguiding active (i.e. luminescent) layer with optical gain. Efficient energy transfer is thus achieved by exciting the nanoscale material via the tail of the waveguided mode of the active layer emission. The G-WET concept is demonstrated on both a nanothin layer of fluorescent sensitive polymer and on CdSe/ZnS quantum dots coated on ZnO thin film, experimentally proving up to an 8-fold increase in the fluorescence of the polymer and a 3-fold increase in the luminescence of the CdSe/ZnS depending of the active layer emission regime (stimulated vs spontaneous emission). Furthermore, we will discuss on the extended G-WET concept which consists on coating nanoscale materials on a nanostructured active layer. The nanostructured active layer offers the necessary photonic modulation and a high specific surface which can presumably lead to a more efficient G-WET concept. Finally, the efficiency as well as the observation conditions of the GWET will be discussed and compared with more conventional charge transfer or dipole-dipole energy transfer.

Proceedings Article | 24 March 2015 Paper

Paper

Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

D. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. Voss, A. Ougazzaden, A. Rajan, K. Prior, R. McClintock, M. Razeghi

Proceedings Volume 9364, 936424 (2015) https://doi.org/10.1117/12.2175897

KEYWORDS: Gallium nitride, Zinc oxide, Indium gallium nitride, Sapphire, Glasses, Ultraviolet radiation, Crystals, Indium, Scanning electron microscopy, Industrial chemicals

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Proceedings Article | 24 March 2015 Paper

Paper

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

V. Sandana, D. Rogers, F. Hosseini Teherani, P. Bove, N. Ben Sedrine, M. Correia, T. Monteiro, R. McClintock, M. Razeghi

Proceedings Volume 9364, 93641O (2015) https://doi.org/10.1117/12.2177427

KEYWORDS: Zinc oxide, Heterojunctions, Transparent conductors, Scanning electron microscopy, Raman spectroscopy, Electronics, Glasses, Transmittance, Crystals, Transparency

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Proceedings Article | 2 April 2014 Paper

Paper

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. Rogers, F. Hosseini Teherani, V. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

Proceedings Volume 8987, 898719 (2014) https://doi.org/10.1117/12.2043704

KEYWORDS: Gallium nitride, Zinc oxide, Scanning electron microscopy, Sapphire, Crystals, Atomic force microscopy, Light emitting diodes, Thin films, Thin film growth, Wet etching

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Proceedings Article | 8 March 2014 Paper

Paper

Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition

V. Sandana, D. Rogers, F. Hosseini Teherani, P. Bove, R. McClintock, M. Razeghi

Proceedings Volume 8987, 89872P (2014) https://doi.org/10.1117/12.2057620

KEYWORDS: Silicon, Scanning electron microscopy, Glasses, Transparent conductors, Crystals, Pulsed laser deposition, Nickel, Oxides, Dye sensitized solar cells, Annealing

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Proceedings Article | 18 March 2013 Paper

Paper

Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

D. Rogers, P. Bove, F. Hosseini Teherani, K. Pantzas, T. Moudakir, G. Orsal, G. Patriarche, S. Gautier, A. Ougazzaden, V. Sandana, R. McClintock, M. Razeghi

Proceedings Volume 8626, 862611 (2013) https://doi.org/10.1117/12.2010046

KEYWORDS: Gallium nitride, Glasses, Sapphire, Zinc oxide, Indium gallium nitride, Indium, Wafer bonding, Laser liftoff, Crystals, Soda-lime glass

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Proceedings Article | 18 March 2013 Paper

Paper

Graphene versus oxides for transparent electrode applications

V. Sandana, D. Rogers, F. Hosseini Teherani, P. Bove, M. Razeghi

Proceedings Volume 8626, 862603 (2013) https://doi.org/10.1117/12.2012865

KEYWORDS: Graphene, Electrodes, Transparent conductors, Chemical vapor deposition, Oxides, Resistance, Indium, Tin, Copper, Solar cells

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Proceedings Article | 18 March 2013 Paper

Paper

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

C. Bayram, K. T. Shiu, Y. Zhu, C. W. Cheng, D. Sadana, F. H. Teherani, D. Rogers, V. Sandana, P. Bove, Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, M. Razeghi

Proceedings Volume 8626, 86260L (2013) https://doi.org/10.1117/12.2009999

KEYWORDS: Gallium nitride, Silicon, Zinc oxide, Light emitting diodes, Indium gallium nitride, Crystals, Photovoltaics, Sapphire, Indium, Metalorganic chemical vapor deposition

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Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

Proceedings Article | 18 March 2013 Paper

Paper

Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition

D. Rogers, F. Hosseini Teherani, P. Bove, A. Lusson, M. Razeghi

Proceedings Volume 8626, 86261X (2013) https://doi.org/10.1117/12.2013601

KEYWORDS: Zinc oxide, Magnesium, Heterojunctions, Pulsed laser deposition, Ultraviolet radiation, Crystals, Atomic force microscopy, Transmittance, Sapphire, Scanning electron microscopy

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Proceedings Article | 2 March 2012 Paper

Paper

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

D. Rogers, A. Ougazzaden, V. Sandana, T. Moudakir, A. Ahaitouf, F. Hosseini Teherani, S. Gautier, L. Goubert, I. Davidson, K. Prior, R. McClintock, P. Bove, H.-J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82630R (2012) https://doi.org/10.1117/12.916013

KEYWORDS: Gallium nitride, Zinc oxide, Glasses, Crystals, Scanning electron microscopy, Wafer bonding, X-ray diffraction, Single crystal X-ray diffraction, Wet etching, Optical microscopy

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Proceedings Article | 1 March 2012 Paper

Paper

Energy harvesting from millimetric ZnO single wire piezo-generators

D. Rogers, C. Carroll, P. Bove, V. Sandana, L. Goubert, A. Largeteau, F. Hosseini Teherani, G. Demazeau, R. McClintock, H. -J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82631X (2012) https://doi.org/10.1117/12.927621

KEYWORDS: Zinc oxide, Crystals, Energy harvesting, Silver, Scanning electron microscopy, Oxygen, Indium, Copper, Photography, Nanowires

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Proceedings Article | 1 March 2012 Paper

Paper

ZnO nanorod electrodes for hydrogen evolution and storage

S. Harinipriya, B. Usmani, D. Rogers, V. Sandana, F. Hosseini Teherani, A. Lusson, P. Bove, H.-J. Drouhin, M. Razeghi

Proceedings Volume 8263, 82631Y (2012) https://doi.org/10.1117/12.927622

KEYWORDS: Zinc oxide, Electrodes, Silicon, Hydrogen, Ions, Metals, Pulsed laser deposition, Thermodynamics, Platinum, Nanorods

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Proceedings Article | 11 March 2011 Paper

Paper

Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

S. Gautier, M. Abid, T. Moudakir, G. Orsal, A. En Naciri, K. Pantzas, F. Jomard, P. Voss, D. Rogers, F. Hosseini Teherani, A. Ougazzaden

Proceedings Volume 7940, 79400X (2011) https://doi.org/10.1117/12.884524

KEYWORDS: Boron, Reflectivity, Refractive index, Zinc oxide, Gallium nitride, Aluminum nitride, Data modeling, Silicon, Ellipsometry, Ultraviolet radiation

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Proceedings Article | 11 March 2011 Paper

Paper

Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications

D. Rogers, V. Sandana, F. Hosseini Teherani, R. McClintock, M. Razeghi, H.-J. Drouhin

Proceedings Volume 7940, 79401K (2011) https://doi.org/10.1117/12.879928

KEYWORDS: Zinc oxide, Adaptive optics, Electronics, Pulsed laser deposition, Crystals, Scanning electron microscopy, Amorphous semiconductors, Optical properties, Zinc, Oxides

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Proceedings Article | 11 March 2011 Paper

Paper

Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive Omega rocking curve linewidth as a figure-of-merit

O. Durand, A. Letoublon, D. Rogers, F. Hosseini Teherani, C. Cornet, A. Le Corre

Proceedings Volume 7940, 79400L (2011) https://doi.org/10.1117/12.877661

KEYWORDS: Zinc oxide, Thin films, Crystals, Avalanche photodetectors, Scattering, Diffraction, Silicon, X-rays, Reflection, Satellites

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Proceedings Article | 11 March 2010 Paper

Paper

ZnO thin films and nanostructures for emerging optoelectronic applications

D. Rogers, F. Teherani, V. Sandana, M. Razeghi

Proceedings Volume 7605, 76050K (2010) https://doi.org/10.1117/12.862634

KEYWORDS: Zinc oxide, Gallium nitride, Light emitting diodes, Nanostructures, Thin films, Solar cells, Indium gallium nitride, Electroluminescence, Excitons, Optoelectronics

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Proceedings Article | 2 March 2010 Paper

Paper

Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

D. Rogers, V. Sandana, F. Hosseini Teherani, M. Razeghi

Proceedings Volume 7603, 760318 (2010) https://doi.org/10.1117/12.848512

KEYWORDS: Zinc oxide, Transistors, Thin films, Pulsed laser deposition, Scanning electron microscopy, Silicon, Transmittance, Glasses, Visible radiation, Field effect transistors

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Proceedings Article | 24 February 2010 Paper

Paper

Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

A. Ougazzaden, D. Rogers, F. Hosseini Teherani, G. Orsal, T. Moudakir, S. Gautier, V. Sandana, F. Jomard, M. Abid, M. Molinari, M. Troyon, P. Voss, D. McGrouther, J. Chapman

Proceedings Volume 7603, 76031D (2010) https://doi.org/10.1117/12.846664

KEYWORDS: Zinc oxide, Indium gallium nitride, Silicon, Gallium nitride, Interfaces, Nitrogen, Zinc, Scanning electron microscopy, Ions, Crystals

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Proceedings Article | 28 February 2009 Paper

Paper

Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

C. Bayram, F. Hosseini Teherani, David Rogers, Manijeh Razeghi

Proceedings Volume 7217, 72170P (2009) https://doi.org/10.1117/12.817033

KEYWORDS: Light emitting diodes, Zinc oxide, Green light emitting diodes, Indium gallium nitride, Electroluminescence, Gallium nitride, Metalorganic chemical vapor deposition, Indium, Solid state lighting, Scanning electron microscopy

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Proceedings Article | 28 February 2009 Paper

Paper

Fabrication of nanostructured heterojunction LEDs using self-forming moth eye type arrays of n-ZnO nanocones grown on p-si (111) substrates by pulsed laser deposition

David Rogers, V. Sandana, F. Hosseini Teherani, M. Razeghi, H.-J. Drouhin

Proceedings Volume 7217, 721708 (2009) https://doi.org/10.1117/12.817030

KEYWORDS: Nanostructures, Zinc oxide, Light emitting diodes, Heterojunctions, Silicon, Nanostructuring, Antireflective coatings, Electroluminescence, Nanolithography, Crystals

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Proceedings Article | 18 February 2009 Paper

Paper

Characterization of ZnO thin films grown on c-sapphire by pulsed laser deposition as templates for regrowth of ZnO by metal organic chemical vapor deposition

David Rogers, F. Hosseini Teherani, C. Sartel, V. Sallet, F. Jomard, P. Galtier, M. Razeghi

Proceedings Volume 7217, 72170F (2009) https://doi.org/10.1117/12.817032

KEYWORDS: Zinc oxide, Metalorganic chemical vapor deposition, Crystals, Pulsed laser deposition, Crystal optics, Thin films, Aluminum, Thin film growth, Atomic force microscopy, Optical properties

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Proceedings Article | 7 March 2008 Paper

Paper

MOCVD growth of ZnO nanostructures using Au droplets as catalysts

V. Sandana, D. Rogers, F. Teherani, R. McClintock, M. Razeghi, H.-J. Drouhin, M. Clochard, V. Sallet, G. Garry, F. Fayoud

Proceedings Volume 6895, 68950Z (2008) https://doi.org/10.1117/12.775632

KEYWORDS: Gold, Zinc oxide, Nanostructures, Annealing, Metalorganic chemical vapor deposition, Nanodroplets, Silicon, Scanning electron microscopy, Zinc, Nanorods

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Proceedings Article | 20 February 2007 Paper

Paper

Etching of ZnO toward the development of ZnO homostructure LEDs

Kathryn Minder, Ferechteh Hosseini Teherani, Dave Rogers, Can Bayram, Ryan McClintock, Patrick Kung, Manijeh Razeghi

Proceedings Volume 6474, 64740Q (2007) https://doi.org/10.1117/12.712784

KEYWORDS: Zinc oxide, Etching, Light emitting diodes, Dry etching, Wet etching, Gallium nitride, Ultraviolet radiation, Heterojunctions, Fabrication, Image processing

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Proceedings Article | 25 March 2005 Paper

Paper

ZnO thin film templates for GaN-based devices

David Rogers, Ferechteh Hosseini Teherani, Alireza Yasan, Ryan McClintock, Kathryn Mayes, Shaban Darvish, Patrick Kung, Manijeh Razeghi, Guy Garry

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.596912

KEYWORDS: Zinc oxide, Gallium nitride, Light emitting diodes, Thin films, Silicon carbide, Crystals, Thin film devices, Sapphire, Optoelectronic devices, Nitrogen

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Showing 5 of 43 publications

Proceedings Volume Editor (16)

SPIE Conference Volume | 29 March 2024

Oxide-based Materials and Devices XV

SPIE Conference Volume | 21 April 2023

Oxide-based Materials and Devices XIV

SPIE Conference Volume | 5 April 2022

Oxide-based Materials and Devices XIII

SPIE Conference Volume | 27 April 2021

Oxide-based Materials and Devices XII

SPIE Conference Volume | 9 April 2020

Oxide-based Materials and Devices XI

Showing 5 of 16 publications

Conference Committee Involvement (23)

Oxide-based Materials and Devices XVI

26 January 2025 | San Francisco, California, United States

Oxide-based Materials and Devices XV

29 January 2024 | San Francisco, California, United States

Oxide-based Materials and Devices XIV

30 January 2023 | San Francisco, California, United States

Oxide-based Materials and Devices XIII

24 January 2022 | San Francisco, California, United States

Oxide-based Materials and Devices XII

6 March 2021 | Online Only, California, United States

Oxide-based Materials and Devices XI

3 February 2020 | San Francisco, California, United States

Oxide-based Materials and Devices X

3 February 2019 | San Francisco, California, United States

Oxide-based Materials and Devices IX

28 January 2018 | San Francisco, California, United States

Oxide-based Materials and Devices VIII

29 January 2017 | San Francisco, California, United States

Oxide-based Materials and Devices VII

14 February 2016 | San Francisco, California, United States

Oxide-based Materials and Devices VI

8 February 2015 | San Francisco, California, United States

Oxide-based Materials and Devices V

2 February 2014 | San Francisco, California, United States

Optoelectronic Integrated Circuits XV

6 February 2013 | San Francisco, California, United States

Oxide-based Materials and Devices IV

4 February 2013 | San Francisco, California, United States

Optoelectronic Integrated Circuits XIV

25 January 2012 | San Francisco, California, United States

Oxide-based Materials and Devices III

22 January 2012 | San Francisco, California, United States

Single-Photon Imaging II

24 August 2011 | San Diego, California, United States

Oxide-based Materials and Devices II

23 January 2011 | San Francisco, California, United States

Single-Photon Imaging

4 August 2010 | San Diego, California, United States

Oxide-based Materials and Devices

24 January 2010 | San Francisco, California, United States

Zinc Oxide Materials and Devices IV

25 January 2009 | San Jose, California, United States

Zinc Oxide Materials and Devices III

20 January 2008 | San Jose, California, United States

Zinc Oxide Materials and Devices II

21 January 2007 | San Jose, California, United States

Showing 5 of 23 Conference Committees

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